公开(公告)号：US20150008519A1

公开(公告)日：2015-01-08

申请号：US14492243

申请日：2014-09-22

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Dario Mariana ,  Andrea Paleari ,  Stephane Wen Yung Bach ,  Paolo Gattari

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/7823 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0869 ,  H01L29/0886 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

Abstract: According to a process for manufacturing an integrated power device, projections and depressions are formed in a semiconductor body that extend in a first direction and are arranged alternated in succession in a second direction, transversely to the first direction. Further provided are a first conduction region and a second conduction region. The first conduction region and the second conduction region define a current flow direction parallel to the first direction, along the projections and the depressions. To form the projections and the depressions, portions of the semiconductor body that extend in the first direction and correspond to the depressions, are selectively oxidized.

Abstract translation: 根据用于制造集成电力装置的方法，在半导体本体中形成有沿第一方向延伸并且沿与第一方向横向的第二方向相继交替设置的凹凸。 还提供了第一导电区域和第二导电区域。 第一导电区域和第二导电区域沿着突起和凹陷限定平行于第一方向的电流流动方向。 为了形成突起和凹陷，半导体本体的沿第一方向延伸并对应于凹陷的部分被选择性地氧化。