公开(公告)号：US20040211953A1

公开(公告)日：2004-10-28

申请号：US10756195

申请日：2004-01-13

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Osama Khouri ,  Giorgio Pollaccia ,  Fabio Pellizzer

IPC: H01L047/00 ,  H01L021/336 ,  H01L021/4763

CPC classification number: H01L45/06 ,  H01L27/2445 ,  H01L45/122 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16

Abstract: A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.

Abstract translation: 用于PCM装置的接触结构通过具有平行于主体的上表面的纵向延伸的细长结构和在垂直平面中延伸的端面形成。 端面与​​硫属活性材料的活性区域的底部接触，使得由端面限定的接触面积的尺寸由细长结构体的厚度及其宽度确定。