公开(公告)号：US09905565B1

公开(公告)日：2018-02-27

申请号：US15464537

申请日：2017-03-21

Applicant: STMicroelectronics SA

Inventor： Hassan El Dirani ,  Yohann Solaro ,  Pascal Fonteneau

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  G11C11/409

CPC classification number: H01L27/10802 ,  G11C11/409 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/7831 ,  H01L29/7841

Abstract: A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. An insulated front gate electrode rests on the first portion. A first back gate electrode and a second back gate electrode are arranged under the insulating layer, respectively opposite the first portion and the second portion.

公开(公告)号：US20180138181A1

公开(公告)日：2018-05-17

申请号：US15868901

申请日：2018-01-11

Applicant: STMICROELECTRONICS SA

Inventor： Hassan El Dirani ,  Yohann Solaro ,  Pascal Fonteneau

IPC: H01L27/108 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  G11C11/409

CPC classification number: H01L27/10802 ,  G11C11/409 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/7831 ,  H01L29/7841

Abstract: A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. An insulated front gate electrode rests on the first portion. A first back gate electrode and a second back gate electrode are arranged under the insulating layer, respectively opposite the first portion and the second portion.

公开(公告)号：US10312240B2

公开(公告)日：2019-06-04

申请号：US15868901

申请日：2018-01-11

Applicant: STMICROELECTRONICS SA

Inventor： Hassan El Dirani ,  Yohann Solaro ,  Pascal Fonteneau

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/78 ,  G11C11/409 ,  H01L27/108

Abstract: A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. An insulated front gate electrode rests on the first portion. A first back gate electrode and a second back gate electrode are arranged under the insulating layer, respectively opposite the first portion and the second portion.

公开(公告)号：US10062681B2

公开(公告)日：2018-08-28

申请号：US15591565

申请日：2017-05-10

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives ,  STMicroelectronics SA ,  Centre National de la Recherche Scientifique

Inventor： Yohann Solaro ,  Sorin Cristoloveanu ,  Claire Fenouillet-Beranger ,  Pascal Fonteneau

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/74 ,  H01L29/749 ,  H01L29/747 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L27/12

CPC classification number: H01L27/0262 ,  H01L27/1203 ,  H01L29/1012 ,  H01L29/42308 ,  H01L29/66477 ,  H01L29/7436 ,  H01L29/747 ,  H01L29/749 ,  H01L29/78 ,  H01L29/7833

Abstract: A protection device for protecting an IC against electrostatic discharge includes a buried insulant layer having a thickness that is no greater than fifty nanometers with bipolar transistors arranged thereon, one of which is NPN and the other of which is PNP. A base of one merges with a collector of the other. The transistors selectively conduct a discharge current between electrodes. A first semiconductor ground plane under the buried insulant layer is capable of being electrically biased and extends underneath the base of the first bipolar transistor. The ground plane and a base of one transistor have the same doping. However, its dopant density is at least tenfold greater than that of the base.

公开(公告)号：US20180061838A1

公开(公告)日：2018-03-01

申请号：US15464537

申请日：2017-03-21

Applicant: STMicroelectronics SA

Inventor： Hassan El Dirani ,  Yohann Solaro ,  Pascal Fonteneau

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  G11C11/409

CPC classification number: H01L27/10802 ,  G11C11/409 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/7831 ,  H01L29/7841

Abstract: A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. An insulated front gate electrode rests on the first portion. A first back gate electrode and a second back gate electrode are arranged under the insulating layer, respectively opposite the first portion and the second portion.

公开(公告)号：US09666577B2

公开(公告)日：2017-05-30

申请号：US14450597

申请日：2014-08-04

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives ,  STMicroelectronics SA ,  Centre National de la Recherche Scientifique

Inventor： Yohann Solaro ,  Sorin Cristoloveanu ,  Claire Fenouillet-Beranger ,  Pascal Fonteneau

IPC: H01L27/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/747 ,  H01L29/78 ,  H01L29/423 ,  H01L29/74 ,  H01L29/749 ,  H01L29/10

CPC classification number: H01L27/0262 ,  H01L27/1203 ,  H01L29/1012 ,  H01L29/42308 ,  H01L29/66477 ,  H01L29/7436 ,  H01L29/747 ,  H01L29/749 ,  H01L29/78 ,  H01L29/7833

Abstract: The invention relates to an IC with an electrostatic discharge protection device. There is a buried insulant layer 50 nm or less in thickness and first and second bipolar transistors on the insulant layer, one being an npn transistor and the other a pnp transistor. The base of the first transistor is merged with the collector of the second transistor and the base of the second transistor is merged with the collector of the first transistor. The first and second bipolar transistors are configured to selectively conduct a discharge current between two electrodes of the protection device. There is a first semiconductor ground plane under the insulant layer, being electrically biased, extending until it is plumb with the base of the first bipolar transistor, exhibiting a first type of doping identical to that of the base of the first bipolar transistor with a doping density at least ten times greater.

公开(公告)号：US20150061023A1

公开(公告)日：2015-03-05

申请号：US14450597

申请日：2014-08-04

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives ,  STMicroelectronics SA ,  Centre National de la Recherche Scientifique

Inventor： Yohann Solaro ,  Sorin Cristoloveanu ,  Claire Fenouillet-Beranger ,  Pascal Fonteneau

IPC: H01L27/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/747 ,  H01L29/78

CPC classification number: H01L27/0262 ,  H01L27/1203 ,  H01L29/1012 ,  H01L29/42308 ,  H01L29/66477 ,  H01L29/7436 ,  H01L29/747 ,  H01L29/749 ,  H01L29/78 ,  H01L29/7833

Abstract: The invention relates to an IC with an electrostatic discharge protection device. There is a buried insulant layer 50 nm or less in thickness and first and second bipolar transistors on the insulant layer, one being an npn transistor and the other a pnp transistor. The base of the first transistor is merged with the collector of the second transistor and the base of the second transistor is merged with the collector of the first transistor. The first and second bipolar transistors are configured to selectively conduct a discharge current between two electrodes of the protection device. There is a first semiconductor ground plane under the insulant layer, being electrically biased, extending until it is plumb with the base of the first bipolar transistor, exhibiting a first type of doping identical to that of the base of the first bipolar transistor with a doping density at least ten times greater.

Abstract translation: 本发明涉及具有静电放电保护装置的IC。 在绝缘层上存在厚度为50nm以下的绝缘绝缘层和第一和第二双极晶体管，一个为npn晶体管，另一个为pnp晶体管。 第一晶体管的基极与第二晶体管的集电极合并，第二晶体管的基极与第一晶体管的集电极合并。 第一和第二双极晶体管被配置为选择性地在保护装置的两个电极之间传导放电电流。 在绝缘层下方存在第一半导体接地层，被电偏压，延伸直到其与第一双极晶体管的基极相连，表现出与第一双极晶体管的基极相同的第一类掺杂，掺杂 密度至少十倍以上。