公开(公告)号：US10921516B2

公开(公告)日：2021-02-16

申请号：US16747933

申请日：2020-01-21

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Yoshihiro Yoneda ,  Takuya Okimoto ,  Kenji Sakurai

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/0232

摘要： A photodiode (PD) device that monolithically integrates a PD element with a waveguide element is disclosed. The PD device includes a conducting layer with a first region and a second region next to the first region, where the PD element exists in the first region, while, the waveguide element exists in the second region and optically couples with the PD element. The waveguide element includes a core layer and a cladding layer on the conducting layer, which forms an optical confinement structure. The PD element includes an absorption layer on the conducting layer and a p-type cladding layer on the absorption layer, which form another optical confinement structure. The absorption layer has a length at least 12 μm measured from the interface against the core layer.

公开(公告)号：US10585239B2

公开(公告)日：2020-03-10

申请号：US16290671

申请日：2019-03-01

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Yoshihiro Yoneda ,  Takuya Okimoto ,  Kenji Sakurai

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/0232

摘要： A photodiode (PD) device that monolithically integrates a PD element with a waveguide element is disclosed. The PD device includes a conducting layer with a first region and a second region next to the first region, where the PD element exists in the first region, while, the waveguide element exists in the second region and optically couples with the PD element. The waveguide element includes a core layer and a cladding layer on the conducting layer, which forms an optical confinement structure. The PD element includes an absorption layer on the conducting layer and a p-type cladding layer on the absorption layer, which form another optical confinement structure. The absorption layer has a length at least 12 μm measured from the interface against the core layer.

公开(公告)号：US20190271808A1

公开(公告)日：2019-09-05

申请号：US16290671

申请日：2019-03-01

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Yoshihiro Yoneda ,  Takuya Okimoto ,  Kenji Sakurai

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/0304

摘要： A photodiode (PD) device that monolithically integrates a PD element with a waveguide element is disclosed. The PD device includes a conducting layer with a first region and a second region next to the first region, where the PD element exists in the first region, while, the waveguide element exists in the second region and optically couples with the PD element. The waveguide element includes a core layer and a cladding layer on the conducting layer, which forms an optical confinement structure. The PD element includes an absorption layer on the conducting layer and a p-type cladding layer on the absorption layer, which form another optical confinement structure. The absorption layer has a length at least 12 μm measured from the interface against the core layer.