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公开(公告)号：US20230402498A1
公开(公告)日：2023-12-14
申请号：US18175863
申请日：2023-02-28
发明人： Yukinori NOSE , Tsuyoshi NAKAJIMA
IPC分类号： H01L29/778 , H01L29/66 , H01L29/20 , H01L27/06
CPC分类号： H01L28/60 , H01L29/66462 , H01L29/2003 , H01L27/0629 , H01L29/7786
摘要： A semiconductor device includes a substrate having a first upper surface; a semiconductor layer provided on the substrate; a first insulator layer provided over the semiconductor layer and having a second upper surface; a lower electrode provided over the first insulator layer; a dielectric layer provided on the lower electrode; and an upper electrode provided on the dielectric layer. A difference between a maximum value and a minimum value of a distance between the first upper surface of the substrate and the second upper surface of the first insulator layer is smaller than a thickness of the semiconductor layer.
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公开(公告)号：US20220310803A1
公开(公告)日：2022-09-29
申请号：US17653719
申请日：2022-03-07
发明人： Tadashi WATANABE , Yukinori NOSE
IPC分类号： H01L29/40 , H01L29/20 , H01L29/778 , H01L21/02 , H01L21/76 , H01L21/765 , H01L29/66
摘要： A semiconductor device includes a substrate, a nitride semiconductor layer formed on the substrate, a source electrode and a drain electrode formed in the nitride semiconductor layer. The source electrode and drain electrode are arranged side by side in a first direction. A gate electrode is formed on the nitride semiconductor layer between the source electrode and the drain electrode. A first protective film is formed on the nitride semiconductor layer, and covers the first protective film covering the source electrode, the drain electrode, and the gate electrode. A source field plate is formed on the first protective film between the gate electrode and the drain electrode in a plan view. A dielectric-breakdown inhibition portion includes a part positioned between an end of the source field plate and an end of the drain electrode in a sectional view, and inhibits dielectric breakdown of the first protective film.
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公开(公告)号：US20190385859A1
公开(公告)日：2019-12-19
申请号：US16436254
申请日：2019-06-10
发明人： Yukinori NOSE
IPC分类号： H01L21/285 , H01L21/02 , H01L29/66 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778
摘要： A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.
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公开(公告)号：US20230094768A1
公开(公告)日：2023-03-30
申请号：US17940111
申请日：2022-09-08
发明人： Yukinori NOSE
摘要： A semiconductor device includes a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer and having a first opening formed therein, a gate electrode disposed on the insulating layer and in contact with the semiconductor layer via the first opening, and a source electrode and a drain electrode in ohmic contact with the semiconductor layer. The gate electrode includes a crystallinity control film disposed on the insulating layer and having a second opening formed such that an inner wall thereof extends to an inner wall of the first opening toward the substrate in plan view in a direction perpendicular to a top surface of the substrate, and a first metal film disposed on the crystallinity control film and in Schottky contact with the semiconductor layer via the inner walls, extending to each other, of the second opening and the first opening.
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公开(公告)号：US20190259843A1
公开(公告)日：2019-08-22
申请号：US16279649
申请日：2019-02-19
发明人： Kenta SUGAWARA , Yukinori NOSE
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778 , H01L21/02 , H01L21/311 , H01L21/285 , H01L29/66
摘要： A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.
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公开(公告)号：US20240213355A1
公开(公告)日：2024-06-27
申请号：US18545295
申请日：2023-12-19
发明人： Atsuya SASAKI , Yukinori NOSE
IPC分类号： H01L29/66 , H01L29/20 , H01L29/778
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7786
摘要： A semiconductor device includes a first nitride semiconductor layer having a first surface, and a first recess formed in the first surface, a second nitride semiconductor layer provided inside the first recess, a first insulating film, covering the first nitride semiconductor layer and the second nitride semiconductor layer, and having a first opening exposing at least a portion of the second nitride semiconductor layer, and an interconnect layer making ohmic contact with the second nitride semiconductor layer through the first opening. The second nitride semiconductor layer has a second surface opposing the interconnect layer. A second recess, continuous with the first opening, is formed in the second surface. The interconnect layer makes direct contact with the second nitride semiconductor layer at an inner surface of the second recess.
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公开(公告)号：US20210151572A1
公开(公告)日：2021-05-20
申请号：US17163115
申请日：2021-01-29
发明人： Kenta SUGAWARA , Yukinori NOSE
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/66 , H01L21/02 , H01L21/311 , H01L21/285 , H01L29/778 , H01L29/423
摘要： A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.
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公开(公告)号：US20220157950A1
公开(公告)日：2022-05-19
申请号：US17520871
申请日：2021-11-08
发明人： Yukinori NOSE , Kenichi WATANABE
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/778 , H01L21/76 , H01L21/765 , H01L29/66
摘要： A semiconductor device includes a semiconductor layer, a source electrode and a drain electrode that are disposed on the upper surface of the semiconductor layer, a gate electrode disposed on the upper surface of the semiconductor layer and located between the source electrode and the drain electrode, a first insulating film disposed on the gate electrode, and a field plate disposed on the first insulating film, at least part of the field plate overlapping the gate electrode, the field plate including a first metal layer and a second metal layer disposed on the upper surface of the first metal layer, the first metal layer containing gold, the second metal layer containing at least one of tantalum, tungsten, molybdenum, niobium, and titanium.
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