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公开(公告)号：US20240287706A1
公开(公告)日：2024-08-29
申请号：US18568957
申请日：2022-05-02
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Jin Hwa LEE , Minori TERAMOTO
Abstract: A synthetic single crystal diamond that includes nitrogen atoms at a concentration of 50 ppm or more and 1200 ppm or less in terms of number of atoms, wherein an infrared absorption spectrum of the synthetic single crystal diamond has an absorption signal within a wavenumber range of 1460 cm−1 or more and 1470 cm−1 or less.
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公开(公告)号：US20240229295A1
公开(公告)日：2024-07-11
申请号：US18283790
申请日：2022-03-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Yikang ZUO , Jin Hwa LEE , Yoshiki NISHIBAYASHI , Yutaka KOBAYASHI , Minori TERAMOTO , Hitoshi SUMIYA
Abstract: A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm−1 to 1333 cm−1 in a Raman spectrum has a half-width of 2.0 cm−1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a 13C content of less than 0.01% based on the number of atoms.
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公开(公告)号：US20230220584A1
公开(公告)日：2023-07-13
申请号：US18009726
申请日：2021-05-14
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Jin Hwa LEE , Minori TERAMOTO
CPC classification number: C30B29/04 , C30B33/04 , C30B9/10 , B01J3/065 , B01J2203/0655
Abstract: A synthetic single crystal diamond containing 100 ppm or more and 1500 ppm or less of nitrogen atoms, in which the synthetic single crystal diamond contains aggregates each composed of one vacancy and two to four nitrogen atoms present adjacent to the vacancy, a ratio b/a of a length b of a short diagonal line to a length a of a long diagonal line of diagonal lines of a Knoop indentation in a direction in a {001} plane of the synthetic single crystal diamond is 0.08 or less, and the Knoop indentation is formed by measuring Knoop hardness in the direction in the {001} plane of the synthetic single crystal diamond according to JIS Z 2251: 2009 under conditions of a temperature of 23° C.±5° C. and a test load of 4.9 N.
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公开(公告)号：US20240279843A1
公开(公告)日：2024-08-22
申请号：US18569005
申请日：2022-05-02
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Jin Hwa LEE , Minori TERAMOTO
Abstract: A synthetic single crystal diamond that includes nitrogen atoms at a concentration of 50 ppm to 1000 ppm, wherein the synthetic single crystal diamond contains an aggregate composed of one vacancy and two substitutional nitrogen atoms present adjacent to the vacancy, a ratio b/a of a length “b” of a longer diagonal line of a second Knoop indentation to a length “a” of a longer diagonal line of a first Knoop indentation is 0.90 or less on the synthetic single crystal diamond, the first Knoop indentation is an indentation formed on a surface of the synthetic single crystal diamond in a state where a Knoop indenter is pressed in a direction of a {110} plane in accordance with JIS Z 2251:2009, and the second Knoop indentation is a Knoop indentation remaining on the surface of the synthetic single crystal diamond after the test load is released.
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公开(公告)号：US20230383436A1
公开(公告)日：2023-11-30
申请号：US18034235
申请日：2021-11-02
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Jin Hwa LEE
CPC classification number: C30B29/04 , C30B9/10 , C30B33/04 , C30B33/02 , C01B32/26 , C01B32/28 , C01P2006/21
Abstract: Provided is a synthetic single crystal diamond containing conjugants each composed of one vacancy and one boron atom, wherein the concentration of boron atoms based on atom numbers is 0.1 ppm or more and 100 ppm or less.
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Patent Agency Ranking
公开(公告)号：US20250003848A1
公开(公告)日：2025-01-02
申请号：US18703736
申请日：2022-10-13
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Jin Hwa LEE
IPC: G01N3/56
Abstract: An annular contactor comprising polycrystalline diamond, having a rotation axis extending through the center thereof, and comprising a first portion having an inn end portion and a constant thickness in the radial direction, and a second portion having an out end portion and a decreasing thickness in the radial direction, wherein: the second portion has a first surface and a second surface continuous with the first portion, and a connection surface connecting the first surface and the second surface; the angle θ between the first surface and the second surface is 100-150°; the length between a first boundary portion between the first surface and the connection surface, and a second boundary portion between the second surface and the connection surface, is 1-10 μm; the length from the rotation axis to the out end portion is 0.5-5 mm; and the average particle diameter of the diamond particles is 10-300 nm.
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公开(公告)号：US20240183068A1
公开(公告)日：2024-06-06
申请号：US18283788
申请日：2022-03-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Yikang ZUO , Jin Hwa LEE , Yoshiki NISHIBAYASHI , Minori TERAMOTO , Yutaka KOBAYASHI , Hitoshi SUMIYA
Abstract: A single crystal diamond having a half width of an x-ray diffraction rocking curve of 20 seconds or less, a half width of a peak at a Raman shift of 1332 cm−1 to 1333 cm−1 (inclusive) in a Raman spectroscopic spectrum of 2.0 cm−1 or less, an etch pit density of 10,000/cm2 or less, a content of nitrogen based on number of atoms of 0.0001-0.1 ppm (inclusive), and a content of 13C based on number of atoms of 0.01-1.0% (inclusive).
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公开(公告)号：US20240175167A1
公开(公告)日：2024-05-30
申请号：US18283803
申请日：2022-03-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Yikang ZUO , Jin Hwa LEE , Yoshiki NISHIBAYASHI , Minori TERAMOTO , Yutaka KOBAYASHI , Hitoshi SUMIYA
Abstract: A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, wherein the half-width of the X-ray diffraction rocking curve is measured with CuKα radiation in a (004) plane parallel arrangement using a diamond crystal as a first crystal in X-ray diffraction by a double-crystal method, a peak at a Raman shift in the range of 1332 cm−1 to 1333 cm−1 in a Raman spectrum has a half-width of 2.0 cm−1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm2 or less, the etch-pit density is measured in an etching test, and the single-crystal diamond has a nitrogen content of more than 0.1 ppm and 50 ppm or less based on the number of atoms.
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公开(公告)号：US20240175166A1
公开(公告)日：2024-05-30
申请号：US18283794
申请日：2022-02-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Yoshiki NISHIBAYASHI , Yikang ZUO , Jin Hwa LEE , Minori TERAMOTO , Yutaka KOBAYASHI
Abstract: A single-crystal diamond, wherein the single-crystal diamond has an average of a phase difference per unit thickness of 10 nm/mm or less, and the phase difference has a standard deviation of 5 nm/mm or less.
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10.发明公开公开(公告)号：US20240183070A1
公开(公告)日：2024-06-06
申请号：US18283805
申请日：2022-03-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hitoshi SUMIYA , Yoshiki NISHIBAYASHI , Yikang ZUO , Jin Hwa LEE , Minori TERAMOTO , Yutaka KOBAYASHI
Abstract: A single-crystal diamond, wherein the single-crystal diamond has a nitrogen content based on the number of atoms of more than 0.1 ppm and 50 ppm or less, the single-crystal diamond has a boron content based on the number of atoms of 0.1 ppm or less, the single-crystal diamond has an average of a phase difference per unit thickness of 20 nm/mm or less, and the phase difference has a standard deviation of 10 nm/mm or less.
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