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公开(公告)号：US20150311037A1
公开(公告)日：2015-10-29
申请号：US14693323
申请日：2015-04-22
发明人： Mitsuaki Kabasawa , Masaki Ishikawa , Yusuke Ueno
IPC分类号： H01J37/317 , H01J37/141 , H01J37/147 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/141 , H01J37/1471 , H01J37/1474 , H01J37/244 , H01J37/3045 , H01J2237/14 , H01J2237/15 , H01J2237/31701
摘要： A beamline unit of an ion implanter includes a steering electromagnet, a beam scanner, and a beam collimator. The beamline unit contains a reference trajectory of an ion beam. The steering electromagnet deflects the ion beam in an x direction perpendicular to a z direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane.
摘要翻译： 离子注入机的光束单元包括转向电磁体，光束扫描器和光束准直器。 束线单元包含离子束的参考轨迹。 转向电磁铁使垂直于z方向的x方向偏转离子束。 光束扫描器以往复方式沿x方向偏转离子束以扫描离子束。 光束准直仪包括准直透镜，其沿着参考轨迹沿z方向校准扫描的离子束，并且准直透镜在光束扫描器的扫描原点处具有焦点。 控制器校正转向电磁铁中的x方向上的偏转角，使得偏转的离子束的实际轨迹与xz平面上的扫描原点处的参考轨迹相交。
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公开(公告)号：US20180145000A1
公开(公告)日：2018-05-24
申请号：US15816838
申请日：2017-11-17
IPC分类号： H01L21/66 , H01L21/265 , H01J37/317 , H01J37/08 , H01J37/244 , H01J37/147
CPC分类号： H01L22/26 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/3171 , H01J2237/152 , H01J2237/2448 , H01J2237/24585 , H01J2237/31701 , H01L21/265
摘要： An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.
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公开(公告)号：US09384944B2
公开(公告)日：2016-07-05
申请号：US14693323
申请日：2015-04-22
发明人： Mitsuaki Kabasawa , Masaki Ishikawa , Yusuke Ueno
IPC分类号： H01J37/00 , H01J37/317 , H01J37/244 , H01J37/141 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/141 , H01J37/1471 , H01J37/1474 , H01J37/244 , H01J37/3045 , H01J2237/14 , H01J2237/15 , H01J2237/31701
摘要： A beamline unit of an ion implanter includes a steering electromagnet, a beam scanner, and a beam collimator. The beamline unit contains a reference trajectory of an ion beam. The steering electromagnet deflects the ion beam in an x direction perpendicular to a z direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane.
摘要翻译： 离子注入机的光束单元包括转向电磁体，光束扫描器和光束准直器。 束线单元包含离子束的参考轨迹。 转向电磁铁使垂直于z方向的x方向偏转离子束。 光束扫描器以往复方式沿x方向偏转离子束以扫描离子束。 光束准直仪包括准直透镜，其沿着参考轨迹沿z方向校准扫描的离子束，并且准直透镜在光束扫描器的扫描原点处具有焦点。 控制器校正转向电磁铁中的x方向上的偏转角，使得偏转的离子束的实际轨迹与xz平面上的扫描原点处的参考轨迹相交。
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公开(公告)号：US10283422B2
公开(公告)日：2019-05-07
申请号：US15816838
申请日：2017-11-17
IPC分类号： H01L21/00 , H01L21/66 , H01J37/08 , H01J37/147 , H01J37/244 , H01J37/317 , H01L21/265
摘要： An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.
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