公开(公告)号：US20180115286A1

公开(公告)日：2018-04-26

申请号：US15332830

申请日：2016-10-24

Applicant: SYNAPTICS INCORPORATED

Inventor： Yonggang CHEN ,  Sagar KUMAR

IPC: H03F1/30 ,  H03F3/195 ,  H04L25/03

CPC classification number: H04L25/03057 ,  H03F1/301 ,  H03F1/42 ,  H03F3/193 ,  H03F3/45197 ,  H03F2200/297 ,  H03F2200/447 ,  H03F2200/552

Abstract: Frequency characteristics of a peaking stage can vary depending on variations in the process used to fabricate the peaking stage. For example, depending on the batch of wafers and where on a wafer the peaking stage is formed, the capacitors and resistors may have different values, thereby changing the frequency characteristics of the peaking stage. The embodiments herein describe a peaking stage that is invariant of the process variation. That is, one or more of the frequency characteristics of the peaking stages do not vary as the values of a capacitor or resistor change. As such, peaking stages formed in different process corners on the wafer have the same frequency characteristics, and thus, function in a similar manner.