公开(公告)号：US20230283237A1

公开(公告)日：2023-09-07

申请号：US18182047

申请日：2023-03-10

申请人： pSemi Corporation

发明人： Simon Edward Willard ,  Chris Olson ,  Tero Tapio Ranta

IPC分类号： H03F1/02 ,  H01L21/84 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10 ,  H01L27/06 ,  H03F3/193 ,  H03F1/22 ,  H03F1/52 ,  H03F3/195 ,  H03F3/21

CPC分类号： H03F1/0205 ,  H01L28/40 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/1095 ,  H01L27/0688 ,  H03F3/193 ,  H03F1/223 ,  H03F1/523 ,  H03F3/195 ,  H03F3/21 ,  H03F2200/48 ,  H03F2200/297 ,  H03F2200/61 ,  H03F2200/451 ,  H03F2200/108 ,  H03F2200/42 ,  H03F2200/75

摘要： A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

公开(公告)号：US11664769B2

公开(公告)日：2023-05-30

申请号：US17843372

申请日：2022-06-17

申请人： pSemi Corporation

发明人： Jonathan James Klaren ,  David Kovac ,  Eric S. Shapiro ,  Christopher C. Murphy ,  Robert Mark Englekirk ,  Keith Bargroff ,  Tero Tapio Ranta

IPC分类号： H03F1/22 ,  H03F3/195 ,  H03F3/213 ,  H03F3/24 ,  H03F1/30 ,  H03F1/56 ,  H03F3/193

CPC分类号： H03F1/223 ,  H03F1/301 ,  H03F1/56 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H03F3/245 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/165 ,  H03F2200/18 ,  H03F2200/21 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/243 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/306 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/42 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/498 ,  H03F2200/555 ,  H03F2200/61 ,  H03F2200/78

摘要： Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

公开(公告)号：US20190229686A1

公开(公告)日：2019-07-25

申请号：US15879621

申请日：2018-01-25

申请人： Cree, Inc.

发明人： Haedong Jang ,  Timothy Canning ,  Bjoern Herrmann ,  Zulhazmi Mokhti ,  Frank Trang ,  Richard Wilson

IPC分类号： H03F3/189 ,  H03F3/24

CPC分类号： H03F3/189 ,  H03F1/0288 ,  H03F1/565 ,  H03F3/193 ,  H03F3/24 ,  H03F2200/222 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/306 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/451 ,  H03H7/01 ,  H03H7/0115 ,  H03H7/17 ,  H03H7/38

摘要： An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

公开(公告)号：US20180083579A1

公开(公告)日：2018-03-22

申请号：US15272103

申请日：2016-09-21

申请人： Peregrine Semiconductor Corporation

发明人： Hossein Noori ,  Chih-Chieh Cheng

IPC分类号： H03F1/32 ,  H03F1/56 ,  H03F3/195 ,  H03G3/00 ,  H03G3/10

CPC分类号： H03F1/3205 ,  H03F1/56 ,  H03F3/195 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/21 ,  H03F2200/211 ,  H03F2200/213 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/24 ,  H03F2200/243 ,  H03F2200/249 ,  H03F2200/27 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/306 ,  H03F2200/312 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/417 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/495 ,  H03F2200/546 ,  H03F2200/72 ,  H03F2200/75 ,  H03G1/0029 ,  H03G1/0088 ,  H03G1/0094 ,  H03G3/001 ,  H03G3/008 ,  H03G3/10 ,  H03G2201/106 ,  H03G2201/307 ,  H03G2201/504

摘要： A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

公开(公告)号：US09755588B2

公开(公告)日：2017-09-05

申请号：US14779642

申请日：2014-03-27

申请人： Asahi Kasei Microdevices Corporation

发明人： Daisuke Matsuoka

IPC分类号： H03F1/02 ,  H03F3/45 ,  H03F3/00 ,  H02M3/07

CPC分类号： H03F3/005 ,  H02M3/07 ,  H03F1/0205 ,  H03F3/45076 ,  H03F3/45183 ,  H03F2200/297 ,  H03F2200/513 ,  H03F2203/45012 ,  H03F2203/45674

摘要： An object is to output output signal amplitude exceeding power supply voltage or output signal amplitude falling below ground voltage without requiring a charge pump circuit or the like to generate positive or negative power supply voltage for an operational amplifier. The present invention provides a signal output circuit comprising an operational amplifier including: an amplification stage configured to amplify differential input voltage; and an output stage configured to amplify an input signal amplified by the amplification stage and output the input signal as an output signal, wherein the output stage is a switched capacitor circuit which includes switches and a capacitor configured to sample differential voltage between input voltage outputted from the amplification stage and voltage other than the input voltage and which transfers the differential voltage sampled by the capacitor by switching of the switches based on the input voltage.

公开(公告)号：US20170230014A1

公开(公告)日：2017-08-10

申请号：US15229464

申请日：2016-08-05

申请人： STMicroelectronics SA

发明人： Raphael Paulin

IPC分类号： H03F1/56 ,  H04B5/00 ,  H03F3/195

CPC分类号： H03F1/565 ,  H03F1/086 ,  H03F1/223 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/321 ,  H03F2200/336 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/75 ,  H04B5/0081

摘要： A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

公开(公告)号：US20170093350A1

公开(公告)日：2017-03-30

申请号：US15232422

申请日：2016-08-09

申请人： Dialog Semiconductor (UK) Limited

发明人： Carlos Zamarreno Ramos ,  Ambreesh Bhattad ,  Frank Kronmueller

IPC分类号： H03F1/34 ,  H03F3/45 ,  H03F3/193

CPC分类号： H03F1/342 ,  H03F1/14 ,  H03F3/193 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/135 ,  H03F2200/153 ,  H03F2200/297 ,  H03F2200/36 ,  H03F2200/411 ,  H03F2200/462 ,  H03F2200/474

摘要： A multi-stage amplifier, comprising a first amplifier stage is presented. The output of the first amplifier stage is coupled to a first terminal of a capacitor having a controllable capacitance. The input of a second amplifier stage is coupled to the output of the first amplifier stage and the first terminal of the capacitor. The output of the second amplifier stage is coupled to a second terminal of the capacitor and an output of the multi-stage amplifier. The input of a current sensing circuit is coupled with the output of the multi-stage amplifier. A control signal generator is coupled between the output of the current sensing circuit and a control terminal of the capacitor. The control signal generator provides a control signal to the capacitor in order to control or vary the capacitance of the capacitor.

公开(公告)号：US09571044B1

公开(公告)日：2017-02-14

申请号：US14919513

申请日：2015-10-21

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： Ning Zhu ,  Damon G. Holmes ,  Jeffrey K. Jones

IPC分类号： H03F3/04 ,  H03F1/42 ,  H03F3/193 ,  H03F1/56

CPC分类号： H03F1/565 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/49175 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/402 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2200/75 ,  H01L2924/00014

摘要： Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.

摘要翻译： RF放大器的实施例包括具有控制端子和第一和第二载流端子的晶体管，以及耦合在第一载流端子和接地参考节点之间的分流电路。 分路电路包括第一并联电感，第二并联电感和串联耦合的并联电容器。 第二并联电感和并联电容器在放大器的中心工作频率附近形成串联谐振电路，并且RF冷点节点存在于第一和第二分流电感之间。 RF放大器还包括耦合在RF冷点节点和接地参考节点之间的视频带宽电路。

公开(公告)号：US20160218685A1

公开(公告)日：2016-07-28

申请号：US15092215

申请日：2016-04-06

申请人： SEMTECH CORPORATION

发明人： Sandeep Louis D'SOUZA ,  Kenneth Colin DYER ,  Raghava Manas BACHU

IPC分类号： H03F3/16

CPC分类号： H03F3/16 ,  G11C27/02 ,  H03F2200/297 ,  H03F2200/411

摘要： Examples are provided for a multi-stage track-and-hold circuit (THA). The multi-stage THA may include a first stage, a second stage, and a third stage. The first stage may be coupled to an input signal and configured to sample the input signal. The second stage may be coupled to the first stage and may include a buffer circuit. The third stage may be coupled to the second stage and can include a bootstrapped THA. The first stage may further include a shunted source-follower circuit and a switched source-follower circuit. The shunted source-follower circuit may include a first switch that can be operable to couple an output node of the shunted source-follower circuit to ground potential.

摘要翻译： 为多级跟踪保持电路（THA）提供了实例。 多级THA可以包括第一级，第二级和第三级。 第一级可以耦合到输入信号并被配置为对输入信号进行采样。 第二级可以耦合到第一级，并且可以包括缓冲器电路。 第三级可以耦合到第二级并且可以包括引导的THA。 第一级还可以包括分流源跟随器电路和开关源跟随器电路。 分流源跟随器电路可以包括第一开关，其可操作以将分流源跟随器电路的输出节点耦合到地电位。

公开(公告)号：US20150371770A1

公开(公告)日：2015-12-24

申请号：US14841881

申请日：2015-09-01

申请人： Raytheon Company

发明人： Timothy D. Aust

IPC分类号： H01F27/40 ,  H01F27/29 ,  H01F27/28

CPC分类号： H01F27/40 ,  H01F27/2823 ,  H01F27/29 ,  H03F1/565 ,  H03F3/193 ,  H03F3/211 ,  H03F3/217 ,  H03F3/2178 ,  H03F3/245 ,  H03F3/601 ,  H03F3/604 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/306 ,  H03F2200/321 ,  H03F2200/387 ,  H03F2200/39 ,  H03F2200/391 ,  H03F2200/393 ,  H03F2200/399 ,  H03F2200/423 ,  H03F2200/429 ,  H03F2200/451 ,  H03F2200/541

摘要： A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.

摘要翻译： 宽带功率放大器模块包括多个开关模式放大器和多个阻抗放大器模块。 每个开关模式放大器包括用于接收输入信号的输入端和RF输出端以输出RF功率信号。 开关模式放大器包括由氮化镓（GaN）形成的至少一个半导体开关。 每个阻抗放大器模块包括电连接到相应开关模式放大器的RF输出的输出。 阻抗放大器模块被配置为向每个RF输出注入至少一个阻抗控制信号。