摘要:
A plurality of gate lines and a plurality of data lines intersecting each other are formed on a first insulating substrate having a plurality of first cutouts are formed on the respective pixel areas defined by the data lines and the gate lines. A thin film transistor is connected to each pixel electrode. A reference electrode having a plurality of second cutouts is formed on a second substrate opposite the first substrate. The first cutouts and the second cutouts in the adjacent two pixel areas opposite each other with respect to one data line have an inversion symmetry with respect to the data line.
摘要:
An LCD has a storage electrode wire between long sides of partitions of a pixel electrode and gate lines or data lines. A gate wire and a storage electrode wire are formed on a substrate and covered with a gate insulating layer. A data wire is formed on the gate insulating layer and covered with a passivation layer. A thin film transistor including gate, source and drain electrodes are provided on the substrate. A pixel electrode is formed on the passivation layer and connected to the drain electrode. The pixel electrode is divided into three partitions, a first one having long and short sides parallel to data lines and gate lines, respectively, and second and third ones vice versa. A storage electrode line and some storage electrodes are disposed between the long sides of the partitions and the gate or the data lines, and between the long sides of the partitions. Other storage electrodes disposed between the short sides of the partitions and the gate or the data lines are covered by the pixel electrode. A storage electrode between the short side of the first portion and the long side of the partition is spaced apart from the first partition by at least 3 μm.
摘要:
A thin film transistor array substrate includes an insulating substrate, and gate lines formed on the substrate, storage electrode lines and storage electrodes are also formed on the substrate. Data lines cross over the gate lines and the storage electrode lines. The data lines are electrically insulated from the gate lines and the storage electrode lines. Thin film transistors are connected to the data lines and the gate lines, and pixel electrodes are connected to the thin film transistors. Bridges are formed at the same plane as the pixel electrodes while interconnecting the storage electrode lines and the storage electrodes placed at both sides of the gate lines. The storage electrode lines and the storage electrodes have protrusions or grooves placed close to the bridges to indicate the locations of laser illumination.
摘要:
An LCD has a storage electrode wire between long sides of partitions of a pixel electrode and gate lines or data lines. A gate wire and a storage electrode wire are formed on a substrate and covered with a gate insulating layer. A data wire is formed on the gate insulating layer and covered with a passivation layer. A thin film transistor including gate, source and drain electrodes are provided on the substrate. A pixel electrode is formed on the passivation layer and connected to the drain electrode. The pixel electrode is divided into three partitions, a first one having long and short sides parallel to data lines and gate lines, respectively, and second and third ones vice versa. A storage electrode line and some storage electrodes are disposed between the long sides of the partitions and the gate or the data lines, and between the long sides of the partitions. Other storage electrodes disposed between the short sides of the partitions and the gate or the data lines are covered by the pixel electrode. A storage electrode between the short side of the first portion and the long side of the partition is spaced apart from the first partition by at least 3 &mgr;m.
摘要:
A passivation layer is deposited and a photoresist is formed. The photoresist includes first to third portions with decreased thickness, the second portions located on portions of drain electrodes and data lines and the third portions located on portions of gate lines. A mask for forming the photoresist has rectilinear slits with width and distance of about 0.8-2.0 microns on an area corresponding to the second portions. The passivation layer and an underlying semiconductor layer as well as the photoresist are etched to expose portions of the gate insulating layer under the third portions of the photoresist as well as portions of the passivation layer under the second portions of the photoresist. The exposed portions of the passivation layer and the gate insulating layer are removed to expose the drain electrodes, the gate lines and the data lines as well as portions of the semiconductor layer, which are subsequently removed.
摘要:
A plurality of gate lines and a plurality of data lines intersecting each other are formed on a first insulating substrate having a plurality of first cutouts are formed on the respective pixel areas defined by the data lines and the gate lines. A thin film transistor is connected to each pixel electrode. A reference electrode having a plurality of second cutouts is formed on a second substrate opposite the first substrate. The first cutouts and the second cutouts in the adjacent two pixel areas opposite each other with respect to one data line have an inversion symmetry with respect to the data line.
摘要:
A plurality of gate lines and a plurality of data lines intersecting each other are formed on a first insulating substrate having a plurality of first cutouts are formed on the respective pixel areas defined by the data lines and the gate lines. A thin film transistor is connected to each pixel electrode. A reference electrode having a plurality of second cutouts is formed on a second substrate opposite the first substrate. The first cutouts and the second cutouts in the adjacent two pixel areas opposite each other with respect to one data line have an inversion symmetry with respect to the data line.
摘要:
A passivation layer is deposited and a photoresist is formed. The photoresist includes first to third portions with decreased thickness, the second portions located on portions of drain electrodes and data lines and the third portions located on portions of gate lines. A mask for forming the photoresist has rectilinear slits with width and distance of about 0.8-2.0 microns on an area corresponding to the second portions. The passivation layer and an underlying semiconductor layer as well as the photoresist are etched to expose portions of the gate insulating layer under the third portions of the photoresist as well as portions of the passivation layer under the second portions of the photoresist. The exposed portions of the passivation layer and the gate insulating layer are removed to expose the drain electrodes, the gate lines and the data lines as well as portions of the semiconductor layer, which are subsequently removed.
摘要:
A liquid crystal display includes: a first substrate; a first signal line formed on the first substrate and extending in a direction; a second signal line intersecting the first signal line while being insulated; a pixel electrode formed in a pixel area defined by intersections of the first signal line and the second signal line, the pixel electrode having a plurality of partitions; a switching element connected to the first signal line, the second signal line, and the pixel electrode; a second substrate opposite the first substrate; a black matrix formed on the second substrate; and a common electrode formed over the second substrate having a plurality of domain defining members, wherein each domain is enclosed by the partitions of the pixel electrode and the domain defining members and has at least one long side parallel or perpendicular to the first signal line and at least one short side curved at an angle of about 30 to about 60 degrees with the first signal line.
摘要:
A liquid crystal display (LCD) panel includes a substrate, a plurality of parallel control lines on the substrate, and a bonding pad area on the substrate having a plurality of bonding pads therein. A respective one of a plurality of interconnecting conductors connect a respective bonding pad of the bonding pad area to a respective one of the plurality of parallel control lines, each of the plurality of interconnecting conductors having a uniform resistance. According to embodiments of the invention, an interconnecting conductor of the plurality of interconnecting conductors may include a material selected to provide the uniform resistance. The interconnecting conductor may include a first portion including a first material having a first resistivity and a second portion including a second material having a second resistivity different from the first resistivity. The first and second portions may have respective first and second lengths selected to provide the uniform resistance. According to other embodiments, an interconnecting conductor of the plurality of interconnecting conductors may have a width selected to provide the uniform resistance. In one embodiment, the plurality of interconnecting conductors have a resistivity per unit length associated therewith and extend from the bonding pad area in a fanned configuration, with the resistivity of the interconnecting conductors increasing toward a medial portion of the fanned configuration. The width of the interconnecting conductors may decrease towards the medial portion of the fanned configuration to produce the desired resistivity. According to other embodiments, an interconnecting conductor of the plurality of interconnecting conductors has a length selected to provide the uniform resistance. In one embodiment, the interconnecting conductor has a serpentine portion to provide the desired length.