Grip detection method and electronic device supporting same

    公开(公告)号:US11784395B2

    公开(公告)日:2023-10-10

    申请号:US17089952

    申请日:2020-11-05

    CPC classification number: H01Q1/245 H01Q1/243 H04B5/0037 H04B5/0081 H04W4/80

    Abstract: An electronic device is provided. The electronic device includes a housing including a front surface, a rear surface, and a side surface which at least partially surrounds a space between the front surface and the rear surface, a first antenna disposed in the space, a second antenna disposed substantially in parallel with the rear surface in the space and formed in a coil shape, a conductor spaced a predetermined distance apart from a partial region of the second antenna substantially in parallel therewith and at least partially overlapping the partial region, a sensor electrically connected to the conductor, a communication circuit electrically connected to the first antenna, and a processor electrically connected to the sensor and the communication circuit, and the processor is configured to acquire a capacitance value related to the conductor, and reduce an intensity of a signal outputted through the first antenna according to the acquired capacitance value.

    SEMICONDUCTOR DEVICE
    4.
    发明公开

    公开(公告)号:US20240196594A1

    公开(公告)日:2024-06-13

    申请号:US18478978

    申请日:2023-09-29

    CPC classification number: H10B12/315 H10B12/01

    Abstract: A semiconductor device includes a switching element, and a data storage structure electrically connected to the switching element. The data storage structure includes first electrodes, a second electrode, and a dielectric layer between the first electrodes and the second electrode. The second electrode includes a compound semiconductor layer doped with an impurity element, the compound semiconductor layer includes two or more elements and includes a semiconductor material doped with the impurity element, the two or more elements include a first element and a second element, the first element is silicon (Si), and a concentration of the impurity element in the compound semiconductor layer is in a range of about 0.1 at % to about 5 at %, and a concentration of the first element in the compound semiconductor layer is in a range of about 10 at % to about 15 at %.

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