Abstract:
A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.
Abstract:
A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.
Abstract:
A phase shift device includes a phase shift mask which includes a transparent substrate, and a phase shift pattern which is provided on the transparent substrate, and includes a first area having a first thickness, a second area having a second thickness which is less than the first thickness, a first opening having a first opening width and defined at the first area, and a second opening having a second opening width and defined at the second area.
Abstract:
A photo mask includes a transparent substrate and a mask pattern. The mask pattern is disposed on the transparent substrate. The mask pattern includes a blocking portion for blocking light and a transmitting portion for transmitting the light. The transmitting portion is adjacent to the blocking portion. The blocking portion includes a first blocking layer, a photo guide layer and a second blocking layer. The first blocking layer is disposed on the transparent substrate. The first blocking layer transmits a portion of the light. The first blocking layer includes a plurality of blocking patterns including a first blocking material. The photo guide layer is disposed on the first blocking layer. The photoguide layer guides the transmitted portion of the light to a side surface of the photoguide layer. The second blocking layer reflects the transmitted portion of the light.
Abstract:
A photo mask includes a transparent substrate and a mask pattern. The mask pattern is disposed on the transparent substrate. The mask pattern includes a blocking portion for blocking light and a transmitting portion for transmitting the light. The transmitting portion is adjacent to the blocking portion. The blocking portion includes a first blocking layer, a photo guide layer and a second blocking layer. The first blocking layer is disposed on the transparent substrate. The first blocking layer transmits a portion of the light. The first blocking layer includes a plurality of blocking patterns including a first blocking material. The photo guide layer is disposed on the first blocking layer. The photoguide layer guides the transmitted portion of the light to a side surface of the photoguide layer. The second blocking layer reflects the transmitted portion of the light.