-
公开(公告)号：US20160209955A1
公开(公告)日：2016-07-21
申请号：US14861546
申请日：2015-09-22
申请人： Samsung Display Co., Ltd. , IUCF-HYU (Industry-University Cooperation Foundation Hanyang-University)
发明人： Seung Hun KIM , Cheol JANG , Sang Hwan CHO , Chung Sock CHOI , Myung Mo SUNG
CPC分类号： G06F3/044 , G06F2203/04103 , G06F2203/04111
摘要： A touch screen panel includes first electrode patterns disposed in a first direction, first connection patterns electrically connecting the first electrode patterns, second electrode patterns disposed in a second direction intersecting the first direction and insulated from the first electrode patterns, insulating patterns disposed on the first connection patterns, and second connection patterns disposed on the insulating patterns and electrically connecting the second electrode patterns, in which at least one of the first electrode patterns, the first connection patterns, the second electrode patterns, and the second connection patterns include a first polymer layer including a conductive material infiltrated therein, and the insulating patterns comprise a second polymer layer comprising a dielectric material infiltrated therein.
摘要翻译： 触摸屏面板包括沿第一方向布置的第一电极图案，电连接第一电极图案的第一连接图案，沿与第一方向交叉并与第一电极图形绝缘的第二方向布置的第二电极图案，设置在第一电极图案上的绝缘图案 连接图案和布置在绝缘图案上并电连接第二电极图案的第二连接图案，其中第一电极图案，第一连接图案，第二电极图案和第二连接图案中的至少一个包括第一聚合物 包括渗透在其中的导电材料的层，并且绝缘图案包括包含渗透在其中的介电材料的第二聚合物层。
-
公开(公告)号：US20180247816A1
公开(公告)日：2018-08-30
申请号：US15958538
申请日：2018-04-20
发明人： Myung Mo SUNG , Kyu-Seok HAN
IPC分类号： H01L21/04 , C23C16/26 , C23C16/455 , H01L29/167 , H01L29/16
CPC分类号： H01L21/041 , C23C16/0209 , C23C16/0272 , C23C16/26 , C23C16/407 , C23C16/45525 , C23C28/00 , C23C28/04 , H01L21/306 , H01L29/16 , H01L29/1606 , H01L29/167 , H01L29/49 , H01L29/78684
摘要： A method for manufacturing a functionalized graphene structure includes preparing a substrate having a graphene layer, forming an organic linker layer by providing an organic linker on the graphene layer, and forming a dopant layer by providing a dopant material including a metal on the organic linker layer. The organic linker layer and the dopant layer are formed in-situ.
-
3.发明申请公开(公告)号：US20190112704A1
公开(公告)日：2019-04-18
申请号：US16214878
申请日：2018-12-10
发明人： Myung Mo SUNG , Jinwon JUNG , Jin Seon PARK
IPC分类号： C23C16/40 , H01L29/786 , H01L29/66 , H01L21/02 , C23C16/44 , C23C16/455
摘要： A layer forming method according to one embodiment of the present invention comprises: a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.
-
公开(公告)号：US20180216249A1
公开(公告)日：2018-08-02
申请号：US15933766
申请日：2018-03-23
发明人： Myung Mo SUNG , Jang Mi BAEK , Lynn LEE
CPC分类号： C30B7/06 , C07F7/24 , C30B29/12 , C30B29/54 , H01G9/0029 , H01G9/2004 , H01L51/0004 , H01L51/0007 , H01L51/4253 , H01L51/56
摘要： A method for manufacturing a perovskite crystal structure includes preparing a substrate, disposing a stamp having a roll shape on the substrate, injecting a perovskite precursor solution between the substrate and the stamp, and drying the precursor solution to manufacture a perovskite crystal structure. The stamp rolls in a first direction on the substrate, and the precursor solution is continuously crystallized in the first direction between the substrate and the stamp to manufacture the perovskite crystal structure.
-
5.发明申请公开(公告)号：US20190214291A1
公开(公告)日：2019-07-11
申请号：US16223937
申请日：2018-12-18
发明人： Myung Mo SUNG , Jinwon JUNG , Hongbum KIM , Jin Seon PARK
IPC分类号： H01L21/768 , H01L21/28 , H01L29/423
CPC分类号： H01L21/768 , H01L21/28 , H01L29/42324
摘要： A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.
-
6.发明申请公开(公告)号：US20190115431A1
公开(公告)日：2019-04-18
申请号：US16214864
申请日：2018-12-10
发明人： Myung Mo SUNG , Jinwon JUNG , Hongbum KIM , Jin Seon PARK
IPC分类号： H01L29/15 , H01L29/423 , H01L29/417 , H01L29/51 , H01L29/04 , H01L29/12
摘要： A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.
-
7.发明申请公开(公告)号：US20180233584A1
公开(公告)日：2018-08-16
申请号：US15947969
申请日：2018-04-09
发明人： Myung Mo SUNG , Kyu-Seok HAN , Kwan Hyuck YOON
IPC分类号： H01L29/66 , H01L29/786 , H01L27/32
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02488 , H01L21/02557 , H01L21/0262 , H01L27/1218 , H01L27/1225 , H01L27/3248 , H01L27/3262 , H01L29/242 , H01L29/66969 , H01L29/78603 , H01L29/7869
摘要： A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.
-
8.发明申请公开(公告)号：US20190115432A1
公开(公告)日：2019-04-18
申请号：US16214872
申请日：2018-12-10
发明人： Myung Mo SUNG , Jinwon Jung , Hongbum Kim , Jin Seon Park
摘要： A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.
-
公开(公告)号：US20190062917A1
公开(公告)日：2019-02-28
申请号：US16172179
申请日：2018-10-26
发明人： Myung Mo SUNG , Kyu-Seok HAN , Hongbum KIM
IPC分类号： C23C16/455 , B01J3/00 , B01J3/02 , B01J3/03
摘要： A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.
-
10.发明公开公开(公告)号：US20240061330A1
公开(公告)日：2024-02-22
申请号：US18349504
申请日：2023-07-10
发明人： Myung Mo SUNG , Jinho AHN , Yeong Eun BAK , Hyeon Seok JI , Jae Hyuk LEE
CPC分类号： G03F7/0042 , G03F7/094 , G03F7/0045
摘要： A multilayer molecular film photoresist is provided. The multilayer molecular film photoresist comprises a plurality of molecular lines extending upwards above a substrate arranged in the horizontal direction. Each of the molecular lines includes a plurality of inorganic single molecules and an organic single molecule sandwiched between at least some of the inorganic single molecules, and these single molecules are connected by bonds.
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.027 秒)
