DISPLAY DEVICE
    1.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20230180545A1

    公开(公告)日:2023-06-08

    申请号:US18161844

    申请日:2023-01-30

    CPC classification number: H10K59/126 H10K59/1315 H01L27/124

    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

    DISPLAY DEVICE
    3.
    发明申请

    公开(公告)号:US20220140032A1

    公开(公告)日:2022-05-05

    申请号:US17343817

    申请日:2021-06-10

    Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

    DISPLAY DEVICE
    4.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240341132A1

    公开(公告)日:2024-10-10

    申请号:US18745977

    申请日:2024-06-17

    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

    DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20240292658A1

    公开(公告)日:2024-08-29

    申请号:US18383899

    申请日:2023-10-26

    CPC classification number: H10K59/1213 H10K59/1201

    Abstract: The present disclosure relates to a display device, more particularly, to a display device in which the number of contact holes may be reduced to improve space utilization of pixels, and the method for fabricating the same. According to an embodiment of the disclosure, the display device includes a first active layer, a first transistor connected to the first active layer, a pixel electrode connected to the first transistor, a second active layer including a material different from a material of the first active layer, and a second transistor connected to the second active layer. At least a portion of the second active layer is directly connected to at least a portion of the first active layer.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240162235A1

    公开(公告)日:2024-05-16

    申请号:US18509934

    申请日:2023-11-15

    CPC classification number: H01L27/1225 H01L25/0753 H01L25/167 H01L27/127

    Abstract: A display device includes: a substrate; a first semiconductor layer and a dummy semiconductor layer on the same layer on a surface of the substrate and comprising the same material as each other; a second semiconductor layer overlapping the dummy semiconductor layer in a direction perpendicular to the surface of the substrate, the first semiconductor layer and the second semiconductor layer comprising different materials from each other; a first transistor comprising the first semiconductor layer, a first source electrode, and a first drain electrode, the first source electrode and the first drain electrode being connected to the first semiconductor layer; a second transistor comprising the second semiconductor layer, a second source electrode, and a second drain electrode, the second source electrode and the second drain electrode being connected to the second semiconductor layer; and a light- emitting element connected to the first transistor.

    DISPLAY DEVICE AND METHOD OF MANUFACTRING THE SAME

    公开(公告)号:US20240040920A1

    公开(公告)日:2024-02-01

    申请号:US18343231

    申请日:2023-06-28

    CPC classification number: H10K59/88 H10K59/1213 H10K59/126 H10K59/1201

    Abstract: A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.

    DISPLAY DEVICE
    9.
    发明申请

    公开(公告)号:US20220020837A1

    公开(公告)日:2022-01-20

    申请号:US17223984

    申请日:2021-04-06

    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

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