公开(公告)号：US20240071757A1

公开(公告)日：2024-02-29

申请号：US18502583

申请日：2023-11-06

申请人： Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

发明人： Mann Ho CHO ,  Kwang Sik JEONG ,  Hyeon Sik KIM ,  Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE

IPC分类号： H01L21/02

CPC分类号： H01L21/02491 ,  H01L21/02422 ,  H01L21/02502 ,  H01L21/0254

摘要： A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

公开(公告)号：US20220130667A1

公开(公告)日：2022-04-28

申请号：US17469279

申请日：2021-09-08

申请人： Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

发明人： Mann Ho CHO ,  Kwang Sik JEONG ,  Hyeon Sik KIM ,  Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE

IPC分类号： H01L21/02

摘要： A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

公开(公告)号：US20190370429A1

公开(公告)日：2019-12-05

申请号：US16266143

申请日：2019-02-04

申请人： Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

发明人： Dong Chan SUH ,  Mann-Ho CHO ,  Woo Bin SONG ,  Kwang Sik JEONG

IPC分类号： G06F17/50 ,  H01L21/265 ,  H01L21/66

摘要： A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model. Such non-destructive measurements may be used to determine manufacturing process parameters corresponding to ideal doping profiles and used to manufacture semiconductor devices implementing such manufacturing process parameters.