公开(公告)号：US20160149043A1

公开(公告)日：2016-05-26

申请号：US14805069

申请日：2015-07-21

Applicant: Samsung Display Co., Ltd.

Inventor： Young-Joo CHOI ,  Hyeon-Jun LEE ,  Byung-Gyu PARK ,  Eun-Hye PARK ,  Byung-Hwan CHU

IPC: H01L29/786 ,  H01L21/311 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L23/532

CPC classification number: H01L27/1288 ,  H01L21/31144 ,  H01L23/53257 ,  H01L27/1225 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate metal pattern comprising a gate line extending in a first direction and a gate electrode electrically connected to the gate line, an active pattern overlapping the gate electrode, an etch-stop layer disposed on the active pattern and having a first through hole and a second through hole adjacent to the first through hole, a data metal pattern comprising a data line extending in a second direction crossing the first direction, a source electrode electrically connected to the active pattern through the first through hole and a drain electrode electrically connected to the active pattern through the second through hole and a first passivation layer disposed on the data metal pattern.

Abstract translation: 薄膜晶体管衬底包括栅极金属图案，其包括在第一方向上延伸的栅极线和电连接到栅极线的栅电极，与栅电极重叠的有源图案，设置在有源图案上的蚀刻停止层，并且具有 与第一通孔相邻的第一通孔和第二通孔，包括沿与第一方向交叉的第二方向延伸的数据线的数据金属图案，通过第一通孔电连接到有源图案的源电极和 漏电极通过第二通孔电连接到有源图案，第一钝化层设置在数据金属图案上。