公开(公告)号：US20140335664A1

公开(公告)日：2014-11-13

申请号：US14340195

申请日：2014-07-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Se-Hwan YU ,  Byoung-Joo KIM ,  Hyang-Shik KONG ,  Kweon-Sam HONG ,  Yoon-Ho KANG ,  Young-Joo CHOI

IPC: H01L27/12 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L27/124 ,  B29D11/00634 ,  G02F1/133516 ,  H01L21/31111 ,  H01L27/1262 ,  H01L33/42 ,  H01L33/58

Abstract: A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.

Abstract translation: 制造滤色器基板的方法包括通过蚀刻透明基板的表面来形成具有预定深度的多个沟槽，在多个沟槽中设置滤色器材料以形成滤色器层，并且形成透明电极 所述透明基板包括其中的滤色器层。

公开(公告)号：US20140209903A1

公开(公告)日：2014-07-31

申请号：US14230787

申请日：2014-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC: H01L27/12

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20160064420A1

公开(公告)日：2016-03-03

申请号：US14731272

申请日：2015-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Young-Joo CHOI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124

Abstract: A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask processes, additional direct contact has been formed to implement a narrow bezel.

Abstract translation: 已经公开了显示基板及其制造方法。 在水平场模式液晶显示装置中，在保持五个掩模处理的同时，已经形成附加的直接接触来实现窄边框。

公开(公告)号：US20160064414A1

公开(公告)日：2016-03-03

申请号：US14753867

申请日：2015-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Young-Joo CHOI

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/45

CPC classification number: H01L27/124 ,  H01L27/1288 ,  H01L29/4908

Abstract: Disclosed are a display substrate, of which productivity is improved by decreasing five mask (M) processes utilized for fabricating the display substrate used in a liquid crystal display device in a horizontal field (Plane to Line Switching (PLS)) mode to four mask processes, and a method of fabricating the same.

Abstract translation: 公开了一种显示基板，其通过将用于制造在水平场（Plane to Line Switching（PLS））模式的液晶显示装置中使用的显示基板的五个掩模（M）处理减少到四个掩模处理 ，及其制造方法。

公开(公告)号：US20150318317A1

公开(公告)日：2015-11-05

申请号：US14798123

申请日：2015-07-13

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC: H01L27/12 ,  H01L21/475 ,  H01L21/4757 ,  H01L21/441 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20150162354A1

公开(公告)日：2015-06-11

申请号：US14249176

申请日：2014-04-09

Applicant: Samsung Display Co., LTD.

Inventor： Kang-Moon JO ,  Joon-Geol KIM ,  Seung-Ho JUNG ,  Young-Joo CHOI

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/15

CPC classification number: H01L27/1259 ,  H01L27/1225 ,  H01L27/124

Abstract: Rather than forming a data line continuously extending in one layer of a thin film transistor substrate, spaced apart segments of a first data connection pattern are formed in a same first layer as that of the gate lines but extending in a crossing direction. Spaced apart parts of a second data connection pattern are formed in a same second layer as that of the source electrodes of the substrate and also extending in the crossing direction. The segments of the first data connection pattern are connected to successive parts of the second data connection pattern to form completed data lines. In one embodiment, the gate lines of the first layer and the spaced apart segments of a first data connection pattern include a low resistivity metal such as copper.

Abstract translation: 不是形成在薄膜晶体管基板的一层中连续延伸的数据线，而是将第一数据连接图案的间隔开的部分形成在与栅极线相同的第一层中，但是在交叉方向上延伸。 第二数据连接图案的分开的部分形成在与基板的源电极相同的第二层中，并且在交叉方向上延伸。 第一数据连接模式的段连接到第二数据连接模式的连续部分以形成完成的数据线。 在一个实施例中，第一层的栅极线和第一数据连接图案的间隔开的段包括诸如铜的低电阻率金属。

公开(公告)号：US20170077246A1

公开(公告)日：2017-03-16

申请号：US15343234

申请日：2016-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC: H01L29/417 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/465 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20160149043A1

公开(公告)日：2016-05-26

申请号：US14805069

申请日：2015-07-21

Applicant: Samsung Display Co., Ltd.

Inventor： Young-Joo CHOI ,  Hyeon-Jun LEE ,  Byung-Gyu PARK ,  Eun-Hye PARK ,  Byung-Hwan CHU

IPC: H01L29/786 ,  H01L21/311 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L23/532

CPC classification number: H01L27/1288 ,  H01L21/31144 ,  H01L23/53257 ,  H01L27/1225 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate metal pattern comprising a gate line extending in a first direction and a gate electrode electrically connected to the gate line, an active pattern overlapping the gate electrode, an etch-stop layer disposed on the active pattern and having a first through hole and a second through hole adjacent to the first through hole, a data metal pattern comprising a data line extending in a second direction crossing the first direction, a source electrode electrically connected to the active pattern through the first through hole and a drain electrode electrically connected to the active pattern through the second through hole and a first passivation layer disposed on the data metal pattern.

Abstract translation: 薄膜晶体管衬底包括栅极金属图案，其包括在第一方向上延伸的栅极线和电连接到栅极线的栅电极，与栅电极重叠的有源图案，设置在有源图案上的蚀刻停止层，并且具有 与第一通孔相邻的第一通孔和第二通孔，包括沿与第一方向交叉的第二方向延伸的数据线的数据金属图案，通过第一通孔电连接到有源图案的源电极和 漏电极通过第二通孔电连接到有源图案，第一钝化层设置在数据金属图案上。