公开(公告)号：US20160141310A1

公开(公告)日：2016-05-19

申请号：US15006295

申请日：2016-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US20150162420A1

公开(公告)日：2015-06-11

申请号：US14623693

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L29/66 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。

公开(公告)号：US20140042429A1

公开(公告)日：2014-02-13

申请号：US13755730

申请日：2013-01-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。