公开(公告)号：US20140042429A1

公开(公告)日：2014-02-13

申请号：US13755730

申请日：2013-01-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。

公开(公告)号：US20160141310A1

公开(公告)日：2016-05-19

申请号：US15006295

申请日：2016-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US20140349426A1

公开(公告)日：2014-11-27

申请号：US14456675

申请日：2014-08-11

Applicant: Samsung Display Co., Ltd.

Inventor： Byung-Duk YANG ,  Eun-Guk LEE ,  Se-Hwan YU ,  Kyoung-Tai HAN ,  Su-Hyoung KANG ,  Kyung-Sook JEON

IPC: G02F1/1335 ,  H01L27/12

CPC classification number: G02F1/133516 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/78633

Abstract: An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.

Abstract translation: 阵列基板包括： 设置在基板上的基板，栅极线和数据线，与栅极线和数据线电连接的薄膜晶体管（“TFT”），设置在基板上的遮光部件和第一滤色器 第二滤色器设置在基板上。 遮光构件覆盖第一滤色器的一部分，并且第二滤色器覆盖遮光构件的一部分。

公开(公告)号：US20140335664A1

公开(公告)日：2014-11-13

申请号：US14340195

申请日：2014-07-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Se-Hwan YU ,  Byoung-Joo KIM ,  Hyang-Shik KONG ,  Kweon-Sam HONG ,  Yoon-Ho KANG ,  Young-Joo CHOI

IPC: H01L27/12 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L27/124 ,  B29D11/00634 ,  G02F1/133516 ,  H01L21/31111 ,  H01L27/1262 ,  H01L33/42 ,  H01L33/58

Abstract: A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.

Abstract translation: 制造滤色器基板的方法包括通过蚀刻透明基板的表面来形成具有预定深度的多个沟槽，在多个沟槽中设置滤色器材料以形成滤色器层，并且形成透明电极 所述透明基板包括其中的滤色器层。

公开(公告)号：US20140054579A1

公开(公告)日：2014-02-27

申请号：US13693423

申请日：2012-12-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dae-Ho KIM ,  Hyun-Jae NA ,  Yong-Su LEE ,  Myoung-Geun CHA ,  Yoon-Ho KHANG ,  Sang-Gab KIM ,  Jae-Neung KIM ,  Se-Hwan YU

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/786 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66477 ,  H01L29/78618 ,  H01L29/78693

Abstract: A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

Abstract translation: 薄膜晶体管基板包括基底基板，有源图案，栅极绝缘图案和栅电极。 有源图案设置在基底基板上。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。 栅极绝缘图案和栅电极与沟道重叠。 栅极绝缘图案设置在沟道和栅电极之间。 源电极和漏极各自包括氟沉积层。

公开(公告)号：US20130200404A1

公开(公告)日：2013-08-08

申请号：US13761930

申请日：2013-02-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Su LEE ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Dong-Jo KIM ,  Min-Jung LEE

IPC: H01L27/15

CPC classification number: H01L27/156 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248

Abstract: A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Abstract translation: 薄膜晶体管显示面板包括：栅电极，源电极和漏电极，其包括在基板上的薄膜晶体管中; 连接到源电极的数据线; 将漏电极连接到像素电极的像素连接构件; 以及栅极焊盘，其通过栅极线连接到栅电极，并且包括第一栅极子板，第二栅极子板和栅极焊盘连接部件，其中像素连接部件和栅极焊盘连接部件的厚度基本相同。

公开(公告)号：US20160064571A1

公开(公告)日：2016-03-03

申请号：US14939564

申请日：2015-11-12

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su LEE ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Su-Hyoung KANG

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/78642 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66666 ,  H01L29/6675 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

公开(公告)号：US20150162420A1

公开(公告)日：2015-06-11

申请号：US14623693

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho PARK ,  Su-Hyoung KANG ,  Dong-Hwan SHIM ,  Yoon-Ho KHANG ,  Se-Hwan YU ,  Min-Jung LEE ,  Yong-Su LEE

IPC: H01L29/66 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。