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9 条记录 (耗时 0.019 秒)

    Display device and manufacturing method thereof
    2.
    发明授权
    Display device and manufacturing method thereof 有权

    公开(公告)号：US11437450B2

    公开(公告)日：2022-09-06

    申请号：US17019445

    申请日：2020-09-14

    申请人： Samsung Display Co., LTD.

    发明人： Jae Sik Kim ,  Woo Yong Sung ,  Byoung Kwon Choo

    IPC分类号： H01L27/32 ,  H01L51/00 ,  H01L51/56

    摘要： A display device includes: a substrate; an inorganic insulating layer disposed on the substrate; a conductor disposed on the inorganic insulating layer; and an organic insulating layer disposed on the conductor, where an opening is defined through the organic insulating layer to expose a part of the upper surface of the conductor, and at least one material selected from a siloxane, a thiol, a phosphate, a disulfide including a sulfur series, and an amine is bonded on the part of the upper surface of the conductor exposed through the opening.

    Thin-film transistor and display device having the same
    3.
    发明授权
    Thin-film transistor and display device having the same 有权

    公开(公告)号：US09659967B2

    公开(公告)日：2017-05-23

    申请号：US14020695

    申请日：2013-09-06

    申请人： Samsung Display Co., Ltd.

    发明人： Jae Sik Kim

    IPC分类号： H01L29/45 ,  H01L27/12 ,  H01L29/786

    CPC分类号： H01L27/1225 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

    摘要： A thin-film transistor includes a substrate, a gate electrode formed over the substrate, a gate insulating layer formed over the gate electrode and the substrate, an oxide semiconductor layer formed over the gate insulating layer and comprising a source section and a drain section, a first electrode formed over the substrate and electrically connected to the source section, and a second electrode formed over the substrate and electrically connected to the drain section. The thin-film transistor further includes a first barrier layer disposed between the oxide semiconductor layer and the first electrode, a second barrier layer disposed between the first barrier layer and the first electrode, and the first electrode being electrically connected to the oxide semiconductor layer via the first barrier layer and the second barrier layer.

    Display device and method for manufacturing the same
    6.
    发明授权
    Display device and method for manufacturing the same 有权

    公开(公告)号：US11610956B2

    公开(公告)日：2023-03-21

    申请号：US17069361

    申请日：2020-10-13

    申请人： Samsung Display Co., LTD.

    发明人： Jae Sik Kim ,  Ji Young Choung ,  Jae Ik Kim ,  Yeon Hwa Lee ,  Joon Gu Lee

    IPC分类号： H01L27/32 ,  H01L51/56

    摘要： A display device includes a thin film transistor disposed on a base substrate, an insulation layer covering the thin film transistor, an organic light-emitting diode disposed on the insulation layer, a bus electrode and an organic fluoride pattern. The organic light-emitting diode includes a first electrode electrically connected to the thin film transistor, an organic light-emitting layer disposed on the first electrode, and a second electrode disposed on the organic light-emitting layer. The bus electrode is disposed on the second electrode. The organic fluoride pattern is disposed adjacent to the bus electrode.

    Organic light emitting diode and display device including the same
    8.
    发明授权
    Organic light emitting diode and display device including the same 有权

    公开(公告)号：US10158094B2

    公开(公告)日：2018-12-18

    申请号：US15613728

    申请日：2017-06-05

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Joon Gu Lee ,  Jae Sik Kim ,  Yeon Hwa Lee ,  Se Hoon Jeong

    IPC分类号： H01L51/50 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52

    摘要： Disclosed is an organic light emitting diode, including a cathode electrode and an anode electrode positioned above the cathode electrode. An emitting layer is positioned between the cathode electrode and the anode electrode. An electron transporting unit is positioned between the cathode electrode and the emitting layer. The electron transporting unit is configured to inject and transport electrons to the emitting layer. A buffer layer is disposed between the cathode electrode and the electron transporting unit. The buffer layer includes an organic layer and a metallic layer disposed on the organic layer.