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公开(公告)号:US20240284705A1
公开(公告)日:2024-08-22
申请号:US18486396
申请日:2023-10-13
Applicant: Samsung Display Co., Ltd.
Inventor: Kiseok Choi , Myounggeun Cha , Jongjun Baek , Heekyun Shin , Yonghoon Yang
IPC: H10K59/121 , H10K59/12 , H10K59/122
CPC classification number: H10K59/1213 , H10K59/1201 , H10K59/122 , H10K2102/103
Abstract: A display apparatus includes: a first substrate including a polymer resin; a first barrier layer on the first substrate and including a portion doped with ions, wherein the portion includes an upper surface of the first barrier layer; a second substrate on the upper surface of the first barrier layer and including a polymer resin; a buffer layer on the second substrate; a first thin-film transistor on the buffer layer; and a light-emitting diode electrically connected to the first thin-film transistor.
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公开(公告)号:US11664224B2
公开(公告)日:2023-05-30
申请号:US17819616
申请日:2022-08-12
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongjun Baek , Jaewoo Jeong , Byungsoo So
IPC: H01L21/02 , H01L21/225 , H01L27/32 , H01L29/66 , H01L51/00
CPC classification number: H01L21/02675 , H01L21/2253 , H01L27/3244 , H01L29/66757 , H01L51/0097 , H01L2227/323
Abstract: A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.
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公开(公告)号:US11744110B2
公开(公告)日:2023-08-29
申请号:US17317304
申请日:2021-05-11
Applicant: Samsung Display Co., Ltd.
Inventor: Jongjun Baek , Jaewoo Jeong , Byungsoo So
IPC: H10K59/121 , H01L29/16 , H01L29/04 , H01L29/786 , H10K50/12 , H10K50/165 , H10K59/123 , H10K71/00
CPC classification number: H10K59/1213 , H01L29/045 , H01L29/1604 , H01L29/78675 , H10K50/12 , H10K50/165 , H10K59/123 , H10K71/00
Abstract: A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.
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公开(公告)号:US20230053153A1
公开(公告)日:2023-02-16
申请号:US17877153
申请日:2022-07-29
Applicant: Samsung Display Co., Ltd.
Inventor: Jongjun Baek , Jongoh Seo
IPC: H01L29/786 , H01L27/32
Abstract: Provided are a thin film transistor capable of minimizing the level of a leakage current and a display apparatus including the same. The thin film transistor includes a buffer layer disposed over a substrate, and a semiconductor layer disposed over the buffer layer, wherein the semiconductor layer includes a first area doped with a first conductivity type and disposed adjacent to an upper surface of the semiconductor layer, a second area spaced apart from the first area, doped with the first conductivity type, and disposed adjacent to the upper surface of the semiconductor layer, a third area doped with a second conductivity type different from the first conductivity type and disposed under the first area, and a fourth area doped with the second conductivity type and disposed under the second area.
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公开(公告)号:US11024689B2
公开(公告)日:2021-06-01
申请号:US16535336
申请日:2019-08-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongjun Baek , Jaewoo Jeong , Byungsoo So
Abstract: A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.
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公开(公告)号:US20240099078A1
公开(公告)日:2024-03-21
申请号:US18243004
申请日:2023-09-06
Applicant: Samsung Display Co., Ltd.
Inventor: Jongjun Baek , Jongoh Seo
IPC: H10K59/124 , H10K59/12
CPC classification number: H10K59/124 , H10K59/1201
Abstract: A display apparatus includes: a substrate; a buffer layer on the substrate; a first semiconductor layer on the buffer layer; a first gate insulating layer on the first semiconductor layer; a first metal layer on the first gate insulating layer; a second gate insulating layer on the first metal layer; a second metal layer on the second gate insulating layer; a first interlayer insulating layer on the second metal layer; and a first dopant doped in at least one of the second gate insulating layer or the first interlayer insulating layer.
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公开(公告)号:US11610919B2
公开(公告)日:2023-03-21
申请号:US17240847
申请日:2021-04-26
Applicant: Samsung Display Co., Ltd.
Inventor: Jonghoon Choi , Jongoh Seo , Ji-Hwan Kim , Jongjun Baek , Byung Soo So
IPC: H01L27/12
Abstract: A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.
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公开(公告)号:US10700307B2
公开(公告)日:2020-06-30
申请号:US16040308
申请日:2018-07-19
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongjun Baek , Yoonho Khang
Abstract: An organic light emitting display device includes a semiconductor element, a lower electrode, a light emitting layer, an upper electrode, an anti-reflection layer, and a thin film encapsulation structure. The semiconductor element is disposed on a substrate. The lower electrode is disposed on the semiconductor element. The light emitting layer is disposed on the lower electrode. The upper electrode is disposed on the light emitting layer. The anti-reflection layer is disposed on the upper electrode. The thin film encapsulation structure is disposed on the anti-reflection layer.
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公开(公告)号:US11854804B2
公开(公告)日:2023-12-26
申请号:US17559415
申请日:2021-12-22
Applicant: Samsung Display Co., Ltd.
Inventor: Hiroshi Okumura , Jongjun Baek , Dong-Sung Lee
CPC classification number: H01L21/02691 , H01L21/67115 , H01L21/02678 , H01L21/02683 , H01L21/02686
Abstract: A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.
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10.
公开(公告)号:US11556002B2
公开(公告)日:2023-01-17
申请号:US16802011
申请日:2020-02-26
Applicant: Samsung Display Co., Ltd.
Inventor: Jihwan Kim , Jongjun Baek , Byungsoo So , Hiroshi Okumura
IPC: G02B26/12 , G02F1/07 , H01L21/67 , H01L21/02 , B23K26/354 , B23K26/064 , B23K26/082
Abstract: Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.
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