THIN FILM TRANSISTOR AND DISPLAY APPARATUS INCLUDING THE SAME

    公开(公告)号:US20230053153A1

    公开(公告)日:2023-02-16

    申请号:US17877153

    申请日:2022-07-29

    Abstract: Provided are a thin film transistor capable of minimizing the level of a leakage current and a display apparatus including the same. The thin film transistor includes a buffer layer disposed over a substrate, and a semiconductor layer disposed over the buffer layer, wherein the semiconductor layer includes a first area doped with a first conductivity type and disposed adjacent to an upper surface of the semiconductor layer, a second area spaced apart from the first area, doped with the first conductivity type, and disposed adjacent to the upper surface of the semiconductor layer, a third area doped with a second conductivity type different from the first conductivity type and disposed under the first area, and a fourth area doped with the second conductivity type and disposed under the second area.

    Display apparatus and method of manufacturing the same

    公开(公告)号:US11024689B2

    公开(公告)日:2021-06-01

    申请号:US16535336

    申请日:2019-08-08

    Abstract: A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240099078A1

    公开(公告)日:2024-03-21

    申请号:US18243004

    申请日:2023-09-06

    CPC classification number: H10K59/124 H10K59/1201

    Abstract: A display apparatus includes: a substrate; a buffer layer on the substrate; a first semiconductor layer on the buffer layer; a first gate insulating layer on the first semiconductor layer; a first metal layer on the first gate insulating layer; a second gate insulating layer on the first metal layer; a second metal layer on the second gate insulating layer; a first interlayer insulating layer on the second metal layer; and a first dopant doped in at least one of the second gate insulating layer or the first interlayer insulating layer.

    Display device and method of manufacturing the same

    公开(公告)号:US11610919B2

    公开(公告)日:2023-03-21

    申请号:US17240847

    申请日:2021-04-26

    Abstract: A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

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