公开(公告)号：US09140742B2

公开(公告)日：2015-09-22

申请号：US13766271

申请日：2013-02-13

Applicant: Samsung Display Co., Ltd.

Inventor： Alexander Voronov ,  Seok-Ho Lee ,  Ji-Hunny Jung ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC: G01R31/02 ,  G01R31/26 ,  G01R31/265

CPC classification number: G01R31/26 ,  G01R31/2648 ,  G01R31/265

Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。

公开(公告)号：US20130265078A1

公开(公告)日：2013-10-10

申请号：US13766271

申请日：2013-02-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Alexander Voronov ,  Seok-Ho Lee ,  Ji-Hunny Jung ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC: G01R31/26

CPC classification number: G01R31/26 ,  G01R31/2648 ,  G01R31/265

Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。