Abstract:
A thin film transistor (TFT), a method of manufacturing the TFT, and a display apparatus including the TFT, the TFT including a substrate; a semiconductor layer on the substrate, the semiconductor layer including a channel region, a lightly doped drain (LDD) region, a source region, and a drain region; a gate insulating layer covering the semiconductor layer; a gate electrode overlapping with the channel region such that the gate insulating layer is interposed between the gate electrode and the channel region; and an organic side wall layer on a side surface of the gate electrode, wherein the organic side wall layer includes a silsesquioxane resin.
Abstract:
A liquid crystal display device includes: a liquid crystal layer between first and second display panels. Then first display panel includes:gate and data lines on a first substrate; a thin film transistor connected to the gate and data lines and exposed at a single contact hole; a color filter on the thin film transistor; a first insulation layer covering the color filter and in which is defined a first contact hole exposing the thin film transistor at the single contact hole; common and pixel electrodes on the first insulation layer and overlapping each other; and a second insulation layer between the pixel and common electrodes and in which is defined a second contact hole exposing the thin film transistor at the single contact hole. Shapes of the first and second contact holes correspond to each other to define the single contact hole at which the thin film transistor is exposed.