IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE USING THE METHOD, AND MASTER TEMPLATE MANUFACTURED BY THE METHOD
    2.
    发明申请
    IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE USING THE METHOD, AND MASTER TEMPLATE MANUFACTURED BY THE METHOD 审中-公开
    显影方法,使用该方法制造主模板的方法,以及通过该方法制造的主模板

    公开(公告)号:US20160288373A1

    公开(公告)日:2016-10-06

    申请号:US14881909

    申请日:2015-10-13

    CPC classification number: B29C33/3842 B29K2995/0027 G03F7/0002

    Abstract: An imprint lithography method includes providing a substrate, forming a first imprint pattern, forming a first resist pattern, etching an object, removing the first resist pattern, forming a second imprint pattern, forming a second resist pattern, etching the object and removing the second resist pattern. The substrate includes a first area, a second area, a third area, and a fourth area. The first imprint pattern is formed on the base substrate in the first and third area. The first resist pattern is formed configured to cover the second area on the base substrate on which the first imprint pattern is formed. The second imprint pattern is formed on the base substrate in the second and fourth areas. The second resist pattern is formed configured to cover the first area on the base substrate on which the second imprint pattern.

    Abstract translation: 压印光刻方法包括提供基板,形成第一印记图案,形成第一抗蚀剂图案,蚀刻物体,去除第一抗蚀剂图案,形成第二印记图案,形成第二抗蚀剂图案,蚀刻物体, 抗蚀图案 基板包括第一区域,第二区域,第三区域和第四区域。 第一印记图案形成在第一和第三区域的基底基板上。 第一抗蚀剂图案被形成为覆盖形成有第一印记图案的基底基板上的第二区域。 第二印记图案形成在第二和第四区域的基底基板上。 第二抗蚀剂图案被形成为覆盖在其上具有第二印记图案的基底基板上的第一区域。

Patent Agency Ranking