公开(公告)号：US20220310948A1

公开(公告)日：2022-09-29

申请号：US17537993

申请日：2021-11-30

Applicant: Samsung Display Co., Ltd. ,  POSTECH Research and Business Development Foundation

Inventor： JUN HYUNG LIM ,  Yong-Young Noh ,  SOYOUNG KOO ,  HYUNGJUN KIM ,  Huihui Zhu

IPC: H01L51/05 ,  H01L27/32 ,  H01L51/00

Abstract: A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

公开(公告)号：US20240258436A1

公开(公告)日：2024-08-01

申请号：US18380678

申请日：2023-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： SOYOUNG KOO ,  TAEWOOK KANG ,  Hyoung Do Kim ,  HYUNGJUN KIM ,  YUNYONG NAM ,  JUN HYUNG LIM ,  Ki-Lim Han

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7869

Abstract: A display device includes: a buffer layer including an inorganic insulating material, an active pattern disposed on the buffer layer and including a channel region and a first conductor region adjacent to the channel region, a gate insulating layer disposed on the buffer layer and the active pattern and including an inorganic insulating material, a gate electrode layer including a first electrode extending along a side surface of the gate insulating layer and including a first contact portion electrically contacting the first conductor region, and an oxygen supply layer including a first pattern disposed between the first electrode and the gate insulating layer, wherein the first pattern includes a first groove recessed from a side surface of to surround at least a part of the first contact portion in a plan view.

公开(公告)号：US20220406877A1

公开(公告)日：2022-12-22

申请号：US17825724

申请日：2022-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： MYOUNGGEUN CHA ,  SOYOUNG KOO ,  DONGHWAN SHIM ,  SANGGUN CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes a first pixel and a second pixel. A light emitting element and a pixel circuit of the second pixel are in a second area. The first pixel includes a silicon transistor and an oxide transistor in the second area. The first pixel includes a connection line that electrically connects one of the silicon transistor and the oxide transistor to a light emitting element in a first area. The connection line is on the same layer as the oxide semiconductor pattern and includes a transparent conductive oxide.

公开(公告)号：US20220077267A1

公开(公告)日：2022-03-10

申请号：US17318350

申请日：2021-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： HYUNGJUN KIM ,  SOYOUNG KOO ,  EOK SU KIM ,  YUNYONG NAM ,  JUN HYUNG LIM ,  KYUNGJIN JEON

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

公开(公告)号：US20160013257A1

公开(公告)日：2016-01-14

申请号：US14793966

申请日：2015-07-08

Applicant: Samsung Display Co., Ltd

Inventor： SOYOUNG KOO ,  Myounghwa Kim ,  Sangho Park ,  Jun Hyung Lim ,  Masataka Kano

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.

Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。