公开(公告)号：US20130309821A1

公开(公告)日：2013-11-21

申请号：US13870053

申请日：2013-04-25

Applicant: Samsung Display Co., Ltd.

Inventor： Hyeong-Suk YOO ,  Ho-Jun LEE ,  Sung-Ryul KIM ,  O-Sung SEO ,  Hong-Kee CHIN

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248

Abstract: A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the above multi-layered passivation film forming a first photoresist pattern including a first portion formed on part of the drain electrode and on the pixel region, and a second portion. The second portion is thicker than the first portion. Then, patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern, and forming a transparent electrode pattern on the second passivation layer.

Abstract translation: 制造薄膜晶体管阵列基板的方法包括在基板上形成栅极图案，在基板上形成栅极绝缘膜，在基板上形成源/漏图案和半导体图案，形成第一，第二和第三钝化层 胶片依次在基材上。 在上述多层钝化膜上形成包括形成在漏电极的一部分上和在像素区域上的第一部分的第一光致抗蚀剂图案和第二部分。 第二部分比第一部分厚。 然后，使用第一光致抗蚀剂图案图案化第三钝化膜，通过去除第一光致抗蚀剂图案的第一部分形成第二光致抗蚀剂图案，在基板上形成透明电极膜，去除设置在第一光致抗蚀剂图案上的第二光致抗蚀剂图案和透明电极膜 第二光致抗蚀剂图案，并且在第二钝化层上形成透明电极图案。

公开(公告)号：US20140247403A1

公开(公告)日：2014-09-04

申请号：US14065686

申请日：2013-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Jin MUN ,  Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sung-Ryul KIM ,  Ki-Hun JEONG ,  Byeong-Hoon CHO ,  Jung-Suk Bang ,  Kun-Wook HAN

IPC: G02F1/1333 ,  H01L27/32 ,  H01L31/14

CPC classification number: G02F1/13338 ,  G02F1/136204 ,  G02F1/136209 ,  G02F2001/13312 ,  G02F2202/10 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  H01L27/14678 ,  H01L27/323 ,  H01L2227/323

Abstract: A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element and extending in a direction, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.

Abstract translation: 一种触摸显示装置，包括基底基板，设置在基底基板上并被配置为阻挡可见光并透过红外光的光阻挡半导体图案;感光元件，设置在光阻半导体图案上，并被配置为使用 入射红外光，被配置为驱动感测元件的驱动元件，与感测元件或驱动元件电连接并沿一个方向延伸的信号线，以及布置在信号线下方的布线连接部，并且包括与 阻光半导体图案。

公开(公告)号：US20130234142A1

公开(公告)日：2013-09-12

申请号：US13872605

申请日：2013-04-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dae-Cheol KIM ,  Sung-Ryul KIM ,  Yung-Jong YEO ,  Hong-Kee CHIN ,  Ki-Hun JEONG

IPC: H01L31/113 ,  H01L31/12

CPC classification number: G02F1/1368 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L31/1136 ,  H01L31/12

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外，红外感测晶体管类似于可见感测晶体管。