THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING BACKPLANE FOR FLAT PANEL DISPLAY
    5.
    发明申请
    THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING BACKPLANE FOR FLAT PANEL DISPLAY 有权
    薄膜晶体管及其制造方法以及制造用于平板显示器的背板的方法

    公开(公告)号:US20150028331A1

    公开(公告)日:2015-01-29

    申请号:US14339232

    申请日:2014-07-23

    摘要: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

    摘要翻译: 提供一种薄膜晶体管(TFT)及其制造方法,以及制造平板显示器(FPD)背板的方法。 根据本发明的实施例的TFT的制造方法包括在基板上形成栅电极; 在所述基板上形成绝缘层以覆盖所述栅电极; 使用卤素气体对绝缘层的上表面进行等离子体处理; 在所述绝缘层上形成氧化物半导体层,并对应于所述栅电极; 以及在所述绝缘层上形成源电极和漏电极以接触所述氧化物半导体层的部分。

    Organic light emitting diode display
    7.
    发明授权
    Organic light emitting diode display 有权
    有机发光二极管显示

    公开(公告)号:US09553136B2

    公开(公告)日:2017-01-24

    申请号:US14032907

    申请日:2013-09-20

    IPC分类号: H01L27/32

    摘要: An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first thin film transistor connected to the OLED and including a first channel area extending in a second direction crossing the first direction, and one or more additional thin film transistors connected to the first thin film transistor and including corresponding additional channel areas extending in the second direction.

    摘要翻译: 一种有机发光二极管(OLED)显示器,包括沿第一方向弯曲的柔性基板,布置在柔性基板上的OLED,连接到OLED的第一薄膜晶体管,并且包括沿与第二方向交叉的第二方向延伸的第一通道区域 第一方向以及连接到第一薄膜晶体管的一个或多个附加薄膜晶体管,并且包括在第二方向上延伸的对应的附加沟道区。

    Thin-film transistor, method of manufacturing the same, and method of manufacturing backplane for flat panel display
    8.
    发明授权
    Thin-film transistor, method of manufacturing the same, and method of manufacturing backplane for flat panel display 有权
    薄膜晶体管,其制造方法以及制造用于平板显示器的背板的方法

    公开(公告)号:US09312395B2

    公开(公告)日:2016-04-12

    申请号:US14339232

    申请日:2014-07-23

    摘要: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

    摘要翻译: 提供一种薄膜晶体管(TFT)及其制造方法,以及制造平板显示器(FPD)背板的方法。 根据本发明的实施例的TFT的制造方法包括在基板上形成栅电极; 在所述基板上形成绝缘层以覆盖所述栅电极; 使用卤素气体对绝缘层的上表面进行等离子体处理; 在所述绝缘层上形成氧化物半导体层,并对应于所述栅电极; 以及在所述绝缘层上形成源电极和漏电极以接触所述氧化物半导体层的部分。