公开(公告)号：US20160148986A1

公开(公告)日：2016-05-26

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/32 ,  G09G3/32 ,  H01L51/00 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2300/0842 ,  H01L27/3265 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

Abstract translation: 一种晶体管，包括在基底衬底上的多晶硅层，并且包括沟道区，第一离子掺杂区，第二离子掺杂区，沟道区在第一和第二离子掺杂区之间，沟道中的晶粒的平均尺寸 区域大于第一和第二离子掺杂区域中的晶粒的区域，与沟道区域绝缘并且与沟道区域重叠的第一栅极电极，与第一栅电极绝缘并与沟道区域重叠的第二栅极电极，绝缘层 在所述第二栅电极上，在所述绝缘层上并连接到所述第一离子掺杂区的源电极和所述绝缘层上的漏极连接到所述第二离子掺杂区。

公开(公告)号：US10573698B2

公开(公告)日：2020-02-25

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/12 ,  H01L27/105 ,  H01L27/32 ,  H01L29/786 ,  G09G3/3233 ,  H01L29/66

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

公开(公告)号：US09553203B2

公开(公告)日：2017-01-24

申请号：US14506061

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan Cho ,  Yoonho Khang ,  Hyunjae Na ,  Youngki Shin ,  Donghwan Shim

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66969

Abstract: A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a display element disposed in the pixel area, and a thin film transistor which controls the display element and includes an input electrode, an output electrode and a control electrode, in which the semiconductor layer includes a first portion disposed on the input electrode of the first thin film transistor, a second portion disposed on the output electrode of the first thin film transistor, and a third portion which connects the first portion and the second portion, overlaps the control electrode of the first thin film transistor, and defines a channel of the first thin film transistor.

Abstract translation: 显示面板包括：基板，包括像素区域和外围区域;设置在基板的一部分上的半导体层;设置在像素区域中的显示元件;以及控制显示元件的薄膜晶体管， 输入电极，输出电极和控制电极，其中半导体层包括设置在第一薄膜晶体管的输入电极上的第一部分，设置在第一薄膜晶体管的输出电极上的第二部分，以及第三部分 连接第一部分和第二部分的部分与第一薄膜晶体管的控制电极重叠，并限定第一薄膜晶体管的沟道。

公开(公告)号：US09035296B2

公开(公告)日：2015-05-19

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： Seohong Jung ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。

公开(公告)号：US09647089B2

公开(公告)日：2017-05-09

申请号：US14696257

申请日：2015-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee Jeong ,  Joonhwa Bae ,  Youngki Shin ,  Yoonho Khang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/78675

Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

公开(公告)号：US20160104726A1

公开(公告)日：2016-04-14

申请号：US14696257

申请日：2015-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee Jeong ,  Joonhwa Bae ,  Youngki Shin ,  Yoonho Khang

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/78675

Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

Abstract translation: 薄膜晶体管基板包括：基板; 基底上的晶体硅层; 以及覆盖所述晶体硅层并且包括具有第一厚度的第一部分和具有大于所述第一厚度的第二厚度的第二部分的覆盖层。

公开(公告)号：US20140191228A1

公开(公告)日：2014-07-10

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： SEOHONG JUNG ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。