公开(公告)号：US10573698B2

公开(公告)日：2020-02-25

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/12 ,  H01L27/105 ,  H01L27/32 ,  H01L29/786 ,  G09G3/3233 ,  H01L29/66

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

公开(公告)号：US09653292B2

公开(公告)日：2017-05-16

申请号：US14568309

申请日：2014-12-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonhwa Bae ,  Yoonho Khang

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02691 ,  H01L27/1222 ,  H01L29/7866

Abstract: A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.

公开(公告)号：US09515154B2

公开(公告)日：2016-12-06

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。

公开(公告)号：US11411122B2

公开(公告)日：2022-08-09

申请号：US17086545

申请日：2020-11-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaeseob Lee ,  Meejae Kang ,  Yoonho Khang ,  Keunwoo Kim ,  Hanbit Kim ,  Thanhtien Nguyen

IPC: H01L29/786 ,  H01L27/32

Abstract: A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in an off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.

公开(公告)号：US09748282B2

公开(公告)日：2017-08-29

申请号：US14721505

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Myounghwa Kim ,  Jaewook Kang ,  Joohee Jeon ,  Jongchan Lee ,  Yoonho Khang

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/45 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1362

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2227/323

Abstract: Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.

公开(公告)号：US20140204323A1

公开(公告)日：2014-07-24

申请号：US13940588

申请日：2013-07-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongjo Kim ,  Yoonho Khang ,  Sehwan Yu ,  Jungkyu Lee ,  Jong chan Lee ,  Jiseon Lee ,  Sanggab Kim ,  Shin II Choi

IPC: G02F1/1333

CPC classification number: G02F1/136227 ,  G02F2001/13629 ,  G02F2201/123

Abstract: A liquid crystal display includes a first substrate including a plurality of pixels, a second substrate facing the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. At least one of the pixels includes a thin film transistor disposed on a first insulating substrate, an insulating layer overlapping the thin film transistor, and a pixel electrode disposed on the insulating layer. A contact hole is formed through the insulating layer to expose a first electrode of the thin film transistor, the pixel electrode is electrically connected to the first electrode through the contact hole, and the pixel electrode has a single-layer in an area where the contact hole is formed and a double-layer on the insulating layer.

Abstract translation: 液晶显示器包括：包括多个像素的第一基板;面对第一基板的第二基板;以及介于第一基板和第二基板之间的液晶层。 至少一个像素包括设置在第一绝缘基板上的薄膜晶体管，与薄膜晶体管重叠的绝缘层和设置在绝缘层上的像素电极。 通过绝缘层形成接触孔，露出薄膜晶体管的第一电极，像素电极通过接触孔与第一电极电连接，像素电极在接触区域中具有单层 在绝缘层上形成双层。

公开(公告)号：US10700307B2

公开(公告)日：2020-06-30

申请号：US16040308

申请日：2018-07-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongjun Baek ,  Yoonho Khang

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  H01L51/50

Abstract: An organic light emitting display device includes a semiconductor element, a lower electrode, a light emitting layer, an upper electrode, an anti-reflection layer, and a thin film encapsulation structure. The semiconductor element is disposed on a substrate. The lower electrode is disposed on the semiconductor element. The light emitting layer is disposed on the lower electrode. The upper electrode is disposed on the light emitting layer. The anti-reflection layer is disposed on the upper electrode. The thin film encapsulation structure is disposed on the anti-reflection layer.

公开(公告)号：US09437624B2

公开(公告)日：2016-09-06

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Dongjo Kim ,  Yoonho Khang ,  Myounghwa Kim ,  Kyoungwon Lee

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。

公开(公告)号：US20160148986A1

公开(公告)日：2016-05-26

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/32 ,  G09G3/32 ,  H01L51/00 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2300/0842 ,  H01L27/3265 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

Abstract translation: 一种晶体管，包括在基底衬底上的多晶硅层，并且包括沟道区，第一离子掺杂区，第二离子掺杂区，沟道区在第一和第二离子掺杂区之间，沟道中的晶粒的平均尺寸 区域大于第一和第二离子掺杂区域中的晶粒的区域，与沟道区域绝缘并且与沟道区域重叠的第一栅极电极，与第一栅电极绝缘并与沟道区域重叠的第二栅极电极，绝缘层 在所述第二栅电极上，在所述绝缘层上并连接到所述第一离子掺杂区的源电极和所述绝缘层上的漏极连接到所述第二离子掺杂区。

公开(公告)号：US09837316B2

公开(公告)日：2017-12-05

申请号：US15367568

申请日：2016-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L21/77 ,  H01L21/8234 ,  H01L21/285 ,  H01L29/786 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L21/3205 ,  H01L27/32

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.