LIGHT EMITTING ELEMENT STRUCTURE AND METHOD OF FABRICATING A LIGHT EMITTING ELEMENT

    公开(公告)号:US20220013693A1

    公开(公告)日:2022-01-13

    申请号:US17290682

    申请日:2019-05-27

    Abstract: Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of:
    preparing a lower substrate, which includes a substrate and a separation layer formed on the substrate, and preparing at least one semiconductor rod, which is formed on the separation layer, forming a rod structure, which includes a rod protecting layer formed on the separation layer to surround the at least one semiconductor rod and an auxiliary layer formed on at least part of the rod protecting layer and separating the rod structure from the lower substrate by removing the separation layer, and separating the at least one semiconductor rod from the rod structure.

    DISPLAY DEVICE
    4.
    发明申请

    公开(公告)号:US20210265419A1

    公开(公告)日:2021-08-26

    申请号:US17316339

    申请日:2021-05-10

    Abstract: A display device includes a first pixel and a second pixel; a light emitting layer; a color conversion layer on the light emitting layer; and a color filter layer on the color conversion layer, the light emitting layer including one or more light emitting elements in the first pixel and the second pixel, the color conversion layer including a first color conversion layer in the first pixel and a second color conversion layer in the second pixel. The color filter layer includes a first color filter layer in the first pixel and a second color filter layer in the second pixel, the light emitting elements capable of emitting a first light having a first wavelength, each of the first color conversion layer and the second color conversion layer including first color conversion particles and second color conversion particles.

    LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING SAME

    公开(公告)号:US20220140186A1

    公开(公告)日:2022-05-05

    申请号:US17310745

    申请日:2019-08-20

    Abstract: A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.

    LIGHT EMITTING DEVICE STRUCTURE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20220005991A1

    公开(公告)日:2022-01-06

    申请号:US17291398

    申请日:2019-05-27

    Abstract: A light emitting element structure may include at least one light emitting element which is disposed on a substrate and spaced apart from each other, and extends in a direction perpendicular to the substrate; an auxiliary layer which is disposed on the substrate, exposes at least a portion of the upper surface of the substrate, and surrounds the outer surface of the light emitting element; a current spreading layer which is disposed on the auxiliary layer and electrically contacts an end of the light emitting element; a first pad which is electrically connected to the end of the light emitting element, disposed on the current spreading layer, and does not to overlap the light emitting element; and a second pad which is electrically connected to another end of the light emitting element disposed on the upper surface of the exposed substrate and spaced apart from the auxiliary layer.

    LIGHT-EMITTING DIODE AND DISPLAY DEVICE COMPRISING SAME

    公开(公告)号:US20220085097A1

    公开(公告)日:2022-03-17

    申请号:US17423290

    申请日:2019-12-05

    Abstract: A light-emitting diode includes a first semiconductor region having a first conductive type; a second semiconductor region having a second conductive type; and an active layer disposed between the first semiconductor region and the second semiconductor region and including phosphorus (P). The light-emitting diode has a rod shape, the second semiconductor region includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, which are sequentially stacked, the first semiconductor layer is disposed between the active layer and the second semiconductor layer, and the second semiconductor layer includes a compound represented by AlGaInP and satisfying Equation 1.

    DISPLAY DEVICE
    9.
    发明申请

    公开(公告)号:US20210225993A1

    公开(公告)日:2021-07-22

    申请号:US17255985

    申请日:2018-09-20

    Abstract: A display device includes: a first pixel stem wiring and a common stem wiring extending in a first direction and spaced apart from each other; a first pixel branch wiring branched from the first pixel stem wiring and extending in a second direction crossing the first direction; a common branch wiring branched from the common stem wiring and extending in the second direction; and a first light emitting element between the first pixel branch wiring and the common branch wiring. The first pixel branch wiring includes a base branch pattern connected to the first pixel stem wiring, a separate branch pattern spaced apart from the base branch pattern, and a bridge wiring connecting the base branch pattern to the separate branch pattern

    LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE LIGHT EMITTING ELEMENT

    公开(公告)号:US20210167050A1

    公开(公告)日:2021-06-03

    申请号:US17250633

    申请日:2019-01-03

    Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.

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