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1.发明公开公开(公告)号：US20240266332A1
公开(公告)日：2024-08-08
申请号：US18620480
申请日：2024-03-28
发明人： Hyung Rae CHA , Dong Uk KIM , Sung Ae JANG , Ji Hyun HAM
CPC分类号： H01L25/0753 , H01L27/1214 , H01L33/007 , H01L33/0093 , H01L33/22 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2933/0016 , H01L2933/0025
摘要： A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.
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公开(公告)号：US20220190204A1
公开(公告)日：2022-06-16
申请号：US17444803
申请日：2021-08-10
发明人： Hyung Rae CHA , Dong Uk KIM , Young Chul SIM , Sung Ae JANG , Ji Hyun HAM
摘要： A light-emitting element includes: a first semiconductor layer including a first type semiconductor; a second semiconductor layer including a second type semiconductor different from the first type semiconductor; an active layer between one surface of the first semiconductor layer and one surface of the second semiconductor layer; a first electrode layer on another surface of the second semiconductor layer and having a first cross-sectional area; and a second electrode layer on another surface of the first semiconductor layer and having a second cross-sectional area smaller than the first cross-sectional area. A side surface of the light-emitting element defined by the first semiconductor layer, the active layer, the second semiconductor layer, and the second electrode layer is perpendicular to a main surface of the first electrode layer.
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公开(公告)号：US20210167124A1
公开(公告)日：2021-06-03
申请号：US17265799
申请日：2019-01-14
发明人： Jung Hong MIN , Dae Hyun KIM , Hyun Min CHO , Dong Uk KIM , Dong Eon LEE , Seung A LEE , Hyung Rae CHA
摘要： Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.
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4.发明公开公开(公告)号：US20240313166A1
公开(公告)日：2024-09-19
申请号：US18597759
申请日：2024-03-06
发明人： Hyung Rae CHA , Jun Youn KIM , Dong Uk KIM , Myeong Hee KIM , Seul Ki KIM , Hee Keun LEE
CPC分类号： H01L33/405 , H01L25/167 , H01L33/20 , H01L2933/0016
摘要： A light emitting element, a display device including the same and a method of fabricating the same. The light emitting element may include an element rod including a first semiconductor layer, an active layer, and a second semiconductor layer. First and second contact electrodes may be respectively disposed on a first end surface and a second and opposite end surface of the element rod. A reflection layer may surround the first contact electrode and the element rod. An inner insulating layer may be disposed inside the reflection layer and surround the first contact electrode and the element rod. An outer insulating layer external to the reflection layer and may surround the first contact electrode and the element rod. A first inclination of side surfaces of the first semiconductor layer and the active layer and a second inclination of a side surface of the second semiconductor layer may be different.
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公开(公告)号：US20230215986A1
公开(公告)日：2023-07-06
申请号：US17882971
申请日：2022-08-08
发明人： Hyung Rae CHA , Dae Hyun KIM , Dong Uk KIM , Dong Kyun SEO , Young Chul SIM
CPC分类号： H01L33/44 , H01L25/167 , H01L24/25
摘要： A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.
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公开(公告)号：US20220140186A1
公开(公告)日：2022-05-05
申请号：US17310745
申请日：2019-08-20
发明人： Jung Hong MIN , Dae Hyun KIM , Dong Uk KIM , Hyun Min CHO , Se Young KIM , Seung A LEE , Hyung Rae CHA
摘要： A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.
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公开(公告)号：US20210202450A1
公开(公告)日：2021-07-01
申请号：US17250826
申请日：2019-03-07
发明人： Jung Hong MIN , Dong Uk KIM , Hyung Rae CHA , Dae Hyun KIM , Hyun Min CHO
IPC分类号： H01L25/075 , G06F3/147 , H01L27/12 , H01L33/00 , H01L33/24 , H01L33/30 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/62
摘要： A light emitting element includes a first semiconductor layer; an active layer on a surface of the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film to enclose an outer periphery of each of the first semiconductor layer, the active layer, and the second semiconductor layer; and an electrode layer on the second semiconductor layer. The first semiconductor layer includes a first area that is covered by the insulating film, and a second area that is not covered by the insulating film. A perimeter of the outer periphery of the first semiconductor layer in the first area and a perimeter of the outer periphery of the first semiconductor layer in the second area are different from each other.
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8.发明公开公开(公告)号：US20230369542A1
公开(公告)日：2023-11-16
申请号：US18024544
申请日：2020-12-16
发明人： Hyun Min CHO , Dong Uk KIM , Se Young KIM , Seung Geun LEE , Seung A LEE , Yo Han LEE , Sung Ae JANG , Hyung Rae CHA , Ji Hyun HAM
CPC分类号： H01L33/44 , H01L25/167 , H01L33/0093 , H01L2933/0025
摘要： A light-emitting device includes a light-emitting device core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an element active layer disposed between the first semiconductor layer and the second semiconductor layer; a first insulating layer disposed on the side surface of the light-emitting device core to surround the side surface of the light-emitting device core, and having first fixed charges; and a second insulating layer surrounding the outer side surface of the first insulating layer, and including a material having second fixed charges different from the first fixed charges.
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公开(公告)号：US20230066350A1
公开(公告)日：2023-03-02
申请号：US17662205
申请日：2022-05-05
发明人： Young Chul SIM , Jin Wan KIM , Dong Uk KIM , Dong Kyun SEO , Byung Ju LEE , Seung Geun LEE , Hyung Rae CHA
摘要： A light emitting element may include: a light emitting element core including a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer; and a single crystal insulating layer around a side surface of the light emitting element core.
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公开(公告)号：US20220359783A1
公开(公告)日：2022-11-10
申请号：US17624065
申请日：2020-06-03
发明人： Dong Uk KIM , Se Young KIM , Hyung Rae CHA
摘要： A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.
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