公开(公告)号：US20230352640A1

公开(公告)日：2023-11-02

申请号：US18022402

申请日：2021-08-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chul Jong YOO ,  Dong Eon LEE ,  Myeong Hee KIM ,  Hoo Keun PARK ,  Byung Ju LEE ,  So Young LEE ,  Seung Geun LEE ,  Seung A LEE ,  Jong Won LEE ,  Ji Hyun HAM

IPC: H01L33/60 ,  H01L25/16

CPC classification number: H01L33/60 ,  H01L25/167

Abstract: A includes a substrate including a plurality of pixels, a plurality of transistors disposed on the substrate, a passivation layer overlapping the plurality of transistors, a first electrode and a second electrode disposed on the passivation layer and spaced apart from each other, an insulating layer disposed on the first electrode and the second electrode, a plurality of light emitting elements disposed between the first electrode and the second electrode on the insulating layer and electrically connected to the first electrode and the second electrode, and an insulating reflective layer disposed between the passivation layer and the plurality of light emitting elements.

公开(公告)号：US20210167050A1

公开(公告)日：2021-06-03

申请号：US17250633

申请日：2019-01-03

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Min CHO ,  Dae Hyun KIM ,  Dong Uk KIM ,  Jung Hong MIN ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/22 ,  H01L33/62

Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.

公开(公告)号：US20240120439A1

公开(公告)日：2024-04-11

申请号：US18318811

申请日：2023-05-17

Applicant: Samsung Display Co., LTD.

Inventor： Seung A LEE ,  Bong Chun PARK ,  Kwan Jae LEE ,  Dong Eon LEE ,  So Young LEE

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/30

Abstract: A light emitting element includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and an insulating layer enclosing the first semiconductor layer, the active layer, and at least a portion of the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are successively disposed in a first direction. The active layer includes a first barrier layer, a second barrier layer, and a first well layer disposed between the first barrier layer and the second barrier layer, and including a non-uniform indium composition ratio in a first direction and a second direction intersecting the first direction, and including a non-uniform indium density in a third direction intersecting the first direction and the second direction.

公开(公告)号：US20220140019A1

公开(公告)日：2022-05-05

申请号：US17452538

申请日：2021-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Hoo Keun PARK ,  Seung Geun LEE ,  Won Sik OH ,  Byung Ju LEE ,  Seung A LEE

IPC: H01L27/32

Abstract: A display device includes a first substrate including a plurality of subpixels; a first electrode and a second electrode on the first substrate in each of the plurality of subpixels and spaced apart from each other; a plurality of light emitting elements having both ends on the first electrode and the second electrode, respectively; and a color control layer on the plurality of light emitting elements. The plurality of subpixels includes a first subpixel to display a first color and a second subpixel to display a second color different from the first color, and the plurality of light emitting elements includes first light emitting elements in the first subpixel and to emit light of a third color and second light emitting elements in the second subpixel and to emit light of the second color, wherein the third color is different from the first color and the second color.

公开(公告)号：US20210167124A1

公开(公告)日：2021-06-03

申请号：US17265799

申请日：2019-01-14

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Hyun Min CHO ,  Dong Uk KIM ,  Dong Eon LEE ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L27/15 ,  H01L33/12 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

公开(公告)号：US20250081673A1

公开(公告)日：2025-03-06

申请号：US18819017

申请日：2024-08-29

Applicant: Samsung Display Co., LTD.

Inventor： So Young LEE ,  Bong Chun PARK ,  Kwan Jae LEE ,  Dong Eon LEE ,  Seung A LEE ,  Jong Jin LEE

IPC: H01L33/14 ,  H01L25/16 ,  H01L33/62

Abstract: A display device includes a first electrode and a second electrode spaced apart from each other, and light emitting elements disposed between the first electrode and the second electrode. Each of the light emitting elements include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. Each of the light emitting elements emits light with a wavelength in a range of about 464 nm to about 468 nm at a current density in a range of about 0.5 A/cm2 to about 100 A/cm2, and has a maximum external quantum efficiency greater than or equal to about 15%.

公开(公告)号：US20240284706A1

公开(公告)日：2024-08-22

申请号：US18545905

申请日：2023-12-19

Applicant: Samsung Display Co., LTD.

Inventor： Bong Chun PARK ,  Kwan Jae LEE ,  Dong Eon LEE ,  So Young LEE ,  Seung A LEE ,  Jong Jin LEE

IPC: H10K59/121 ,  C09K11/62 ,  H10K59/12 ,  H10K59/122 ,  H10K59/126 ,  H10K59/131 ,  H10K85/30

CPC classification number: H10K59/1213 ,  C09K11/62 ,  H10K59/1201 ,  H10K59/122 ,  H10K59/126 ,  H10K59/131 ,  H10K85/326

Abstract: A light emitting element includes: a first semiconductor layer of a first type; a first auxiliary layer on the first semiconductor layer and having a first indium composition ratio; a second auxiliary layer on the first auxiliary layer and having a second indium composition ratio; an active layer including barrier layers and well layers that are alternately arranged on the second auxiliary layer and having a third indium composition ratio; and a second semiconductor layer on the active layer and of a second type different from the first type. The second indium composition ratio is greater than the first indium composition ratio and is less than the third indium composition ratio.

公开(公告)号：US20220285582A1

公开(公告)日：2022-09-08

申请号：US17543297

申请日：2021-12-06

Applicant: Samsung Display Co., LTD.

Inventor： Seung A LEE ,  Hoo Keun PARK ,  Young Jin SONG

IPC: H01L33/30 ,  H01L33/18 ,  H01L33/00 ,  H01L25/075

Abstract: A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.

公开(公告)号：US20220140186A1

公开(公告)日：2022-05-05

申请号：US17310745

申请日：2019-08-20

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Dong Uk KIM ,  Hyun Min CHO ,  Se Young KIM ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L33/24 ,  H01L33/38 ,  H01L27/15 ,  H01L33/62

Abstract: A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.

公开(公告)号：US20240038738A1

公开(公告)日：2024-02-01

申请号：US18483444

申请日：2023-10-09

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Min CHO ,  Dae Hyun KIM ,  Dong Uk KIM ,  Jung Hong MIN ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L25/075 ,  H01L33/00 ,  H01L27/12 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/0093 ,  H01L27/1214 ,  H01L33/22 ,  H01L33/62 ,  H01L2933/0066

Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.