摘要:
An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.
摘要:
A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode disposed on the substrate, and a piezoelectric layer disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes an alloy of molybdenum and tantalum.
摘要:
A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.
摘要:
An acoustic wave device includes: a substrate; a functional element that is located on the substrate and excites acoustic waves; a side wall portion that is made of a metal and is located on the substrate so as to surround the functional element; a metal plate that is located above the functional element and the side wall portion, and seals the functional element so that a space is formed above the functional element; and a terminal that is located on the substrate and further out than the side wall portion, and is electrically connected to the functional element.
摘要:
A vibrating element includes a piezoelectric substrate having an excitation section adapted to excite a thickness-shear vibration, and provided with a step section in each of side surfaces on both ends, and a peripheral section having a thickness smaller than a thickness of the excitation section, and the peripheral section has at least one projection section disposed on both principal surfaces in an area where a vibratory displacement when the excitation section excites a vibration is sufficiently attenuated.
摘要:
A tuning fork-type piezoelectric resonator plate has a resonator blank comprising a pair of vibrating leg portions and a base portion from which the leg portions protrude. The pair of leg portions are arranged in parallel protrudingly from one end face of the base portion, and a pronged portion is formed between the pair of leg portions in an intermediate position in a width direction of the one end face of the base portion. The base portion has a pair of through holes along the one end face of the base portion, and on another end face side opposite to the one end face of the base portion, a joining region that joins to an external portion. The pair of through holes are specially positioned and have special wall surface configurations.
摘要:
A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1
摘要:
A resonator device in which a piezoelectric material is disposed between two electrodes. At least one of the electrodes is formed of a nickel-titanium alloy having equal portions nickel and titanium.
摘要:
An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion.
摘要:
An object of the present invention is to provide a crystal oscillator piece in which the generation of leakage vibration is suppressed, and a method for manufacturing such a crystal oscillator piece. More specifically, a method for manufacturing a crystal oscillator piece according to the present invention includes the steps of forming a first etching mask on an upper surface of a crystal wafer and a second etching mask on a lower surface of the crystal wafer, and forming a vibrating tine by immersing the crystal wafer in an etching solution thereby dissolving crystal portions not covered with the first and second etching masks, wherein the second etching mask is designed to have a first protruding portion protruding from a position corresponding to a first edge of the first etching mask, the first protruding portion being chosen to have such a length that a first residue is formed in a predetermined shape on a first side face, irrespective of a positional displacement between the first and second etching masks, and wherein the first and second etching masks are designed so that a second residue formed on a second side face is adjusted so as to ensure that one of two principal axes passing through a centroid and dynamically perpendicular to each other in a cross section taken perpendicularly to a longitudinal direction of the vibrating tine is oriented substantially parallel to the upper or lower surface of the crystal wafer.