公开(公告)号：US09136353B2

公开(公告)日：2015-09-15

申请号：US13713589

申请日：2012-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Hee Choi ,  Andrei Zoulkarneev

IPC: H01L29/04 ,  H01L31/036 ,  H01L29/76 ,  H01L31/112 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/6675 ,  H01L21/02667 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78678

Abstract: A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

Abstract translation: 公开了一种形成多晶硅的方法，使用多晶硅的薄膜晶体管（TFT）和制造该TFT的方法。 形成多晶硅的方法包括：在衬底上形成绝缘层; 在所述绝缘层上形成第一电极和第二电极; 在所述绝缘层上形成至少一个加热层，以连接所述第一电极和所述第二电极; 在所述加热器层上形成含有硅的非晶材料层; 通过蚀刻绝缘层在加热器层下形成通孔; 以及通过在所述第一电极和所述第二电极之间施加电压以将所述非晶材料层结晶成多晶硅层，以加热所述加热层。