专利检索 ap:("Samsung Electronics Co., Ltd.") AND inv:"Arin LEE" 第 1 页

1.

发明公开
OPTICAL PROXIMITY CORRECTION METHOD, MASK MANUFACTURING METHOD, SEMICONDUCTOR CHIP MANUFACTURING METHOD USING THE SAME AND COMPUTING DEVICE 审中-公开

公开(公告)号：US20230205092A1

公开(公告)日：2023-06-29

申请号：US17954975

申请日：2022-09-28

申请人： Samsung Electronics Co., Ltd.

发明人： Arin LEE , Kiho YANG , Jeeeun JUNG , Sungyong MOON , Junyoung JANG

IPC分类号： G03F7/20 , G06F30/398

CPC分类号： G03F7/70441 , G03F7/705 , G06F30/398

摘要： An optical proximity correction (OPC) method for manufacturing a semiconductor chip including detecting edges of an initial layout pattern and determining an edge violating a mask rule, among the edges, as a target edge, setting a reference control point (RCP) on the target edge, forming a multi-edge by dividing the target edge based on the RCP, setting additional control points on the multi-edge, forming a modified layout pattern by transforming the multi-edge into a curved edge based on the RCP and the additional control points, performing an OPC simulation based on the modified layout pattern, and calculating an edge placement error (EPE) of the modified layout pattern based on a result of the OPC simulation may be provided.