公开(公告)号：US20240302758A1

公开(公告)日：2024-09-12

申请号：US18411581

申请日：2024-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ingyun CHUNG ,  Dongjin PARK ,  Sungyong MOON ,  Junyoung JANG

IPC: G03F9/00

CPC classification number: G03F9/7046 ,  G03F9/7049 ,  G03F9/7088 ,  G03F9/7092

Abstract: A pattern correction method includes acquiring, from a database, full shot data including full shot data coordinates and a misalignment value, calculating a deformation coefficient of the full shot data based on a cantilever beam analysis method with respect to the full shot data, extracting first-coordinate data along a first axis in a bit line direction and second-coordinate data along a second axis in a word line direction based on the full shot data, classifying the full shot data based on the first-coordinate data and the second-coordinate data, removing outliers from the full shot data.

公开(公告)号：US20230205092A1

公开(公告)日：2023-06-29

申请号：US17954975

申请日：2022-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Arin LEE ,  Kiho YANG ,  Jeeeun JUNG ,  Sungyong MOON ,  Junyoung JANG

IPC: G03F7/20 ,  G06F30/398

CPC classification number: G03F7/70441 ,  G03F7/705 ,  G06F30/398

Abstract: An optical proximity correction (OPC) method for manufacturing a semiconductor chip including detecting edges of an initial layout pattern and determining an edge violating a mask rule, among the edges, as a target edge, setting a reference control point (RCP) on the target edge, forming a multi-edge by dividing the target edge based on the RCP, setting additional control points on the multi-edge, forming a modified layout pattern by transforming the multi-edge into a curved edge based on the RCP and the additional control points, performing an OPC simulation based on the modified layout pattern, and calculating an edge placement error (EPE) of the modified layout pattern based on a result of the OPC simulation may be provided.