公开(公告)号：US20220084873A1

公开(公告)日：2022-03-17

申请号：US17530169

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUYEON KIM ,  HANMEI CHOI ,  SUKJIN CHUNG ,  BONGJIN KUH ,  CHANGYONG KIM ,  HAKYU SEONG

IPC: H01L21/762 ,  H01L21/02

Abstract: A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

公开(公告)号：US20200381292A1

公开(公告)日：2020-12-03

申请号：US16780810

申请日：2020-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUYEON KIM ,  HANMEI CHOI ,  SUKJIN CHUNG ,  BONGJIN KUH ,  CHANGYONG KIM ,  HAKYU SEONG

IPC: H01L21/762 ,  H01L21/02

Abstract: A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

公开(公告)号：US20190221424A1

公开(公告)日：2019-07-18

申请号：US16164953

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyeong Lee ,  SOONWOOK JUNG ,  BONGJIN KUH ,  PYUNG MOON ,  SUKJIN CHUNG

IPC: H01L21/02

CPC classification number: H01L21/02118 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282

Abstract: Disclosed are method and apparatus for forming a thin layer. The method for forming the thin layer comprises providing a substrate including patterns, forming a bonding layer on the substrate covering an inner surface of a gap between the patterns, forming a preliminary layer on the bonding layer filling the gap; and thermally treating the preliminary layer to form the thin layer. The bonding layer is a self-assembled monomer layer formed using an organosilane monomer. The preliminary layer is formed from a flowable composition comprising polysilane.