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公开(公告)号：US20200227459A1
公开(公告)日：2020-07-16
申请号：US16831928
申请日：2020-03-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： JONGHOON PARK , BUMSUK KIM , JUNG-SAENG KIM , MIN JANG , TAESUB JUNG , HYUKJIN JUNG , DONGMIN KEUM , CHANGROK MOON
IPC: H01L27/146 , G06K9/00 , H01L27/32 , G06F21/32
Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.
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公开(公告)号：US20200035729A1
公开(公告)日：2020-01-30
申请号：US16400094
申请日：2019-05-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： YUN KI LEE , BUMSUK KIM , JONGHOON PARK , JUNSUNG PARK
IPC: H01L27/146 , H04N5/369
Abstract: An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.
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公开(公告)号：US20220130467A1
公开(公告)日：2022-04-28
申请号：US17377141
申请日：2021-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： JAE-DUK YU , SANG-WAN NAM , JONGHOON PARK , HO-JUN LEE
Abstract: An operation method of a nonvolatile memory device includes receiving a read command and an address, increasing a voltage applied to an unselected word line from an off voltage to a read pass voltage during a setup phase in response to the read command, increasing a voltage applied to an unselected string selection line from the off voltage to a pre-pulse voltage during a first setup phase of the setup phase, increasing a voltage applied to an unselected ground selection line from the off voltage to the pre-pulse voltage during the first setup phase, applying a read voltage to a selected word line to read data corresponding to the address, during a sensing phase following the setup phase, and outputting the read data through data lines after the sensing phase. During the setup phase, a slope of the voltage applied to the unselected word line is varied.
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公开(公告)号：US20200176499A1
公开(公告)日：2020-06-04
申请号：US16784308
申请日：2020-02-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： JONGHOON PARK , BUMSUK KIM , JUNG-SAENG KIM , MIN JANG , TAESUB JUNG , HYUKJIN JUNG , DONGMIN KEUM , CHANGROK MOON
IPC: H01L27/146 , H01L27/32 , G06K9/00 , G06F21/32
Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.
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