公开(公告)号：US20160181167A1

公开(公告)日：2016-06-23

申请号：US14975706

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Kook KIM ,  Bang-Won KIM ,  Yu-Sin YANG ,  Young-Jee YOON ,  Sang-Kil LEE ,  Yoo-Seok JANG ,  Chung-Sam JUN

IPC: H01L21/66 ,  H01L21/67 ,  C30B29/10 ,  H01L29/207 ,  C30B25/16 ,  C30B29/40 ,  H01L21/02 ,  H01L29/167

CPC classification number: H01L22/26 ,  C30B25/165 ,  C30B29/40 ,  C30B29/52 ,  H01L22/12

Abstract: An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

Abstract translation: 提供一种形成外延层的装置和方法。 该装置包括处理室，其中进行外延处理以在衬底上形成外延层。 第一供应商将外延层的源气体供应到处理室中。 第二个供应商向处理室供应掺杂物。 检测器在外延生长过程中检测外延层的组成比和外延层中掺杂剂的浓度。 并且控制器控制至少一种源气体的质量流量和与外延生长过程一致的掺杂剂的质量流。 因此，可以根据外延工艺实时地精确地控制外延层的层厚度。