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    BROADBAND LIGHT ILLUMINATORS
    1.
    发明申请
    BROADBAND LIGHT ILLUMINATORS 有权
    宽带灯光照明器

    公开(公告)号：US20130169140A1

    公开(公告)日：2013-07-04

    申请号：US13667203

    申请日：2012-11-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-Seok KO ,  Yu-Sin YANG ,  Sue-Jin CHO ,  Won-Don JOO ,  Min-Kook KIM ,  Sang-Kil LEE ,  Byeong-Hwan JEON

    IPC: H05H1/46 ,  H01J65/04

    CPC classification number: H01J65/04

    Abstract: A broadband light illuminator of an optical inspector for optically detecting defects of an inspection object may include an electrode-less chamber including a plasma area from which broadband light is generated; a first energy provider, exterior to the chamber, configured to provide first energy for ionizing high pressure gases to form ionized gases in the chamber; a second energy provider, exterior to the chamber, configured to provide second energy for transforming the ionized gases into a plasma state to form the plasma area at a central portion of the chamber; an elliptical reflector having a first focus at which the chamber is positioned and a second focus such that the broadband light is reflected from the elliptical reflector toward the second focus; and a lens unit focusing the reflected broadband light onto the inspection object to form an inspection light for detecting the defects of the inspection object.

    Abstract translation: 用于光学检测检查对象的缺陷的光学检查器的宽带照明器可以包括：无电极室，包括产生宽带光的等离子体区域; 第一能量提供者，在室外，被配置为提供第一能量，用于离子化高压气体以在室中形成离子化气体; 第二能量供应器，室外，被配置为提供第二能量，用于将电离气体转换成等离子体状态，以在室的中心部分形成等离子体区域; 具有第一焦点的椭圆形反射器，室被定位，第二焦点使得宽带光从椭圆形反射器反射到第二焦点; 以及透镜单元，将反射的宽带光聚焦到检查对象上，以形成用于检测检查对象的缺陷的检查光。

    METHODS OF FABRICATING MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT
    2.
    发明申请
    METHODS OF FABRICATING MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT 审中-公开
    微电子基板检测设备的制作方法

    公开(公告)号：US20140224987A1

    公开(公告)日：2014-08-14

    申请号：US14257048

    申请日：2014-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Kook KIM ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chang-Hoon Choi

    IPC: H01J37/26 ,  H01J37/08

    CPC classification number: H01J37/265 ,  H01J37/08 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

    Abstract: Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen received from the liquid nitrogen dewar into second gaseous nitrogen. Related methods are also disclosed.

    Abstract translation: 微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台， 检查被放置。 该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮 连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。 冷却装置设置在气体容器上，并且通过将从液氮氮气中接收的液氮蒸发成第二气态氮来冷却氦离子发生器。 还公开了相关方法。

    APPARATUS FOR FORMING A THIN LAYER AND METHOD OF FORMING A THIN LAYER ON A SUBSTRATE USNIG THE SAME
    3.
    发明申请
    APPARATUS FOR FORMING A THIN LAYER AND METHOD OF FORMING A THIN LAYER ON A SUBSTRATE USNIG THE SAME 有权
    用于形成薄层的装置和在基板上形成薄层的方法

    公开(公告)号：US20160181167A1

    公开(公告)日：2016-06-23

    申请号：US14975706

    申请日：2015-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Kook KIM ,  Bang-Won KIM ,  Yu-Sin YANG ,  Young-Jee YOON ,  Sang-Kil LEE ,  Yoo-Seok JANG ,  Chung-Sam JUN

    IPC: H01L21/66 ,  H01L21/67 ,  C30B29/10 ,  H01L29/207 ,  C30B25/16 ,  C30B29/40 ,  H01L21/02 ,  H01L29/167

    CPC classification number: H01L22/26 ,  C30B25/165 ,  C30B29/40 ,  C30B29/52 ,  H01L22/12

    Abstract: An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

    Abstract translation: 提供一种形成外延层的装置和方法。 该装置包括处理室，其中进行外延处理以在衬底上形成外延层。 第一供应商将外延层的源气体供应到处理室中。 第二个供应商向处理室供应掺杂物。 检测器在外延生长过程中检测外延层的组成比和外延层中掺杂剂的浓度。 并且控制器控制至少一种源气体的质量流量和与外延生长过程一致的掺杂剂的质量流。 因此，可以根据外延工艺实时地精确地控制外延层的层厚度。

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