公开(公告)号：US20210159340A1

公开(公告)日：2021-05-27

申请号：US17144444

申请日：2021-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woobin SONG ,  Heiseung KIM ,  Mirco CANTORO ,  Sangwoo LEE ,  Minhee CHO ,  Beomyong HWANG

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L29/161

Abstract: A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.