公开(公告)号：US20160141182A1

公开(公告)日：2016-05-19

申请号：US14886161

申请日：2015-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  Sanghyun Park ,  Se Jung Park ,  Bo Hyeok Choi

IPC: H01L21/308 ,  H01L21/304 ,  C09G1/02

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/823821 ,  H01L29/1054

Abstract: Provided are slurry compositions for polishing a germanium-containing layer and methods of fabricating a semiconductor device using the same. The slurry composition may include a polishing particle, an oxidizing agent, a polishing accelerator, and a selectivity control agent. The oxidizing agent may include at least one selected from the group consisting of superoxide, dioxygenyl, ozone, ozonide, chlorite, chlorate, perchlorate, halogen compounds, nitric acid, nitrate, hypochlorite, hypohalite, and peroxide.

Abstract translation: 提供了用于研磨含锗层的浆料组合物和使用其的半导体器件的制造方法。 浆料组合物可以包括抛光颗粒，氧化剂，抛光促进剂和选择性控制剂。 氧化剂可以包括选自超氧化物，二氧基，臭氧，臭氧化物，亚氯酸盐，氯酸盐，高氯酸盐，卤素化合物，硝酸，硝酸盐，次氯酸盐，次卤酸盐和过氧化物中的至少一种。