公开(公告)号：US09934986B2

公开(公告)日：2018-04-03

申请号：US15049268

申请日：2016-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-seop Shim ,  Seok-han Park ,  Bum-seok Seo

IPC: H01L21/331 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/32139

Abstract: Provided is a method of forming fine patterns, which is capable of easily forming a plurality of patterns repeatedly with a fine pitch when forming patterns necessary for manufacturing a highly integrated semiconductor device exceeding a resolution limit of a photolithography process.