公开(公告)号：US20230207644A1

公开(公告)日：2023-06-29

申请号：US17968037

申请日：2022-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Joo JEON ,  Byung Joo Go ,  Hee-Sung Kam ,  Su Jin Park

IPC: H01L29/417 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L23/522 ,  H01L23/528 ,  G11C16/04 ,  G11C16/26 ,  G11C16/16

CPC classification number: H01L29/41775 ,  G11C16/16 ,  G11C16/26 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11565 ,  H01L27/11573

Abstract: A semiconductor device includes: a substrate includes an active area; a gate structure intersecting the active area; a source/drain area disposed on the active area, a lower contact disposed on the source/drain area or the gate structure; an upper contact disposed on the lower contact; and a plurality of conductive lines disposed on the upper contact, wherein the plurality of conductive lines extend in a first direction parallel to an upper surface of the substrate, wherein the plurality of conductive lines includes a first conductive line disposed on the upper contact, wherein a size in the first direction of the lower contact is smaller than a size in the first direction of the upper contact, wherein a size in a second direction of the lower contact is greater than a size in the second direction of the upper contact, wherein the second direction intersects the first direction.

公开(公告)号：US20220059558A1

公开(公告)日：2022-02-24

申请号：US17210861

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Seon Kim ,  Byung Joo Go ,  Sung Kweon Baek ,  Jae Hwa Seo ,  Chang Heon Lee

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  H01L29/06

Abstract: A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.

公开(公告)号：US20240306384A1

公开(公告)日：2024-09-12

申请号：US18664547

申请日：2024-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Seon Kim ,  Byung Joo Go ,  Sung Kweon Baek ,  Jae Hwa Seo ,  Chang Heon Lee

IPC: H10B41/27 ,  G11C5/06 ,  H01L29/06 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  H01L29/0653 ,  H10B43/27

Abstract: A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.

公开(公告)号：US12016177B2

公开(公告)日：2024-06-18

申请号：US17210861

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Seon Kim ,  Byung Joo Go ,  Sung Kweon Baek ,  Jae Hwa Seo ,  Chang Heon Lee

IPC: H10B41/27 ,  G11C5/06 ,  H01L29/06 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  H01L29/0653 ,  H10B43/27

Abstract: A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.