公开(公告)号：US20160043197A1

公开(公告)日：2016-02-11

申请号：US14820564

申请日：2015-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHEOL KIM ,  DONGHYUN KIM ,  MYEONGCHEOL KIM ,  DAEYONG KIM ,  CHULSUNG KIM

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L29/6681 ,  H01L21/31116 ,  H01L21/76897 ,  H01L29/6656

Abstract: Provided are a semiconductor device and a fabrication method thereof. The semiconductor device may include a fin-shaped active pattern and a gate electrode provided on a substrate, first and second spacers provided on a sidewall of the gate electrode, impurity regions provided at both sides of the gate electrode, a contact plug electrically connected to one of the impurity regions, and a third spacer enclosing the contact plug and having a top surface positioned at substantially the same level as a top surface of the contact plug.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括鳍形有源图案和设置在基板上的栅电极，设置在栅电极的侧壁上的第一和第二间隔物，设置在栅电极两侧的杂质区，电连接到 一个杂质区，以及包围该接触插塞的第三间隔件，并且具有位于该接触插塞顶表面基本相同高度的顶表面。