公开(公告)号：US20250096135A1

公开(公告)日：2025-03-20

申请号：US18962181

申请日：2024-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun LEE ,  Seokjung YUN ,  Chang-Sup LEE ,  Seong Soon CHO ,  Jeehoon HAN

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.