公开(公告)号：US20220404395A1

公开(公告)日：2022-12-22

申请号：US17721522

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyoon RYU ,  Seungbum HONG ,  Kwangeun KIM ,  Hoon KIM ,  Jiwon YEOM ,  Seokjung YUN ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG

IPC: G01R1/067 ,  G01R1/04

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

公开(公告)号：US20250096135A1

公开(公告)日：2025-03-20

申请号：US18962181

申请日：2024-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun LEE ,  Seokjung YUN ,  Chang-Sup LEE ,  Seong Soon CHO ,  Jeehoon HAN

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20200075101A1

公开(公告)日：2020-03-05

申请号：US16659715

申请日：2019-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Da Woon JEONG ,  Sung-Hun LEE ,  Seokjung YUN ,  Hyunmog PARK ,  JoongShik SHIN ,  Young-Bae YOON

IPC: G11C16/04 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L21/768 ,  G11C5/02 ,  G11C5/06 ,  H01L49/02

Abstract: Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same are provided. Three-dimensional (3D) semiconductor memory devices may include a substrate including a cell array region and a connection region, a lower stack structure including a plurality of lower electrodes vertically stacked on the substrate, the lower stack structure having a first stair step structure extending in a first direction on the connection region and a second stair step structure extending in a second direction substantially perpendicular to the first direction on the connection region, and a plurality of intermediate stack structures vertically stacked on the lower stack structure. Each of the intermediate stack structures includes a plurality of intermediate electrodes vertically stacked and has a third stair step structure extending in the second direction on the connection region. Each of the intermediate stack structures exposes the third stair step structure of the intermediate stack structure disposed thereunder.