公开(公告)号：US20230197756A1

公开(公告)日：2023-06-22

申请号：US18065531

申请日：2022-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Jeongsoon Kang ,  Jihong Kim ,  Changyong Um

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14645

Abstract: An image sensor includes a first lower chip, and an upper chip on and bonded to the first lower chip. The first lower chip and the upper chip collectively provide a plurality of pixels. A respective pixel of the plurality of pixels includes a photoelectric conversion element, a floating diffusion region, a ground region, and a transfer gate in the upper chip, and a plurality of lower transistors in the first lower chip. A first lower transistor among the plurality of lower transistors includes a plurality of first channel layers stacked vertically, and a first gate on the plurality of first channel layers.

公开(公告)号：US20250142233A1

公开(公告)日：2025-05-01

申请号：US18885926

申请日：2024-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Gwideok Ryan Lee ,  Doowon Kwon ,  Daehoon Kim ,  Changyong Um

IPC: H04N25/79 ,  H01L27/146

Abstract: A stacked image sensor includes a first semiconductor chip, wherein the first semiconductor chip includes a first contact electrically connected to the first transfer transistor and disposed to extend in a Z-axis direction, a second contact electrically connected to the second transfer transistor and disposed to extend in the Z-axis direction, a plurality of third contacts electrically connected with each of the first floating diffusion region and the second floating diffusion region and disposed to extend in the Z-axis direction, and a first metal region configured to electrically connect the plurality of third contacts to one another and disposed to extend in the Z-axis direction, and the first contact, the second contact, and the first metal region contact a first surface of a first interlayer insulation layer where the first contact, the second contact, and the first metal region are formed.

公开(公告)号：US09515120B2

公开(公告)日：2016-12-06

申请号：US14973855

申请日：2015-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyong Um ,  Youngwoo Jung ,  Jungchak Ahn

IPC: H01L31/0232 ,  H01L21/00 ,  H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14818 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a substrate with a unit pixel defined by a first separation pattern, a photoelectric conversion part in the substrate, a photocharge storage in the substrate, the photocharge storage being adjacent to the photoelectric conversion part, a second separation pattern between the photoelectric conversion part and the photocharge storage, a shielding part on a bottom surface of the substrate to cover the photocharge storage, the shielding part including a first protrusion extending into the substrate and toward the first separation pattern, and an extension extending from the first protrusion to cover the bottom surface of the substrate; and an anti-reflection layer between the shielding part and the substrate, the anti-reflection layer having an overhang structure between the first protrusion and the extension.

Abstract translation: 图像传感器包括具有由第一分离图案限定的单位像素的基板，基板中的光电转换部，基板中的光电荷存储部，与光电转换部相邻的光电荷存储部，光电转换部之间的第二分离图案 转换部分和光电荷存储器，覆盖光电荷存储器的基板的底表面上的屏蔽部分，所述屏蔽部分包括延伸到基板中并朝向第一分离图案的第一突起，以及从第一突起到第 覆盖基板的底面; 以及在所述屏蔽部和所述基板之间的防反射层，所述防反射层在所述第一突起和所述延伸部之间具有突出结构。

公开(公告)号：US20250160010A1

公开(公告)日：2025-05-15

申请号：US18919602

申请日：2024-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong Um

IPC: H01L27/146

Abstract: An image sensor pixel includes a semiconductor substrate including a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface, a floating diffusion region between the first surface and the second surface, and a vertical transfer gate including: a first vertical region and a second vertical region that each include a side surface portion and a lower surface portion, the side surface portion of each of the first vertical region and the second vertical region has a first inclination from the lower surface portion to a first height of the vertical transfer gate relative to the lower surface portion and a second inclination from the first height to a second height of the vertical transfer gate relative to the lower surface portion, and the first height is less than the second height.

公开(公告)号：US20230395567A1

公开(公告)日：2023-12-07

申请号：US18066558

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong Um ,  Hyeran Lee

IPC: H01L25/065 ,  H01L27/146 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L27/14636 ,  H01L25/50 ,  H01L2225/06582 ,  H01L2225/06541

Abstract: A semiconductor package includes first, second, and third semiconductor chips. The second semiconductor chip includes a semiconductor substrate, a first wiring layer on a first surface of the semiconductor substrate, a second wiring layer on a second surface of the semiconductor substrate, and a through via that penetrates the semiconductor substrate and electrically connects the first wiring layer and the second wiring layer. The semiconductor substrate and the through via are spaced apart from each other across a spacer structure. The spacer structure includes a first liner layer in contact with the semiconductor substrate, a second liner layer in contact with the through via, an air gap between the first liner layer and the second liner layer, and a capping layer that seals the air gap on the first liner layer and the second liner layer.

公开(公告)号：US09679935B2

公开(公告)日：2017-06-13

申请号：US14960449

申请日：2015-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong Um ,  Byungjun Park ,  Jungchak Ahn

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: An image sensor may include a device isolation structure defining a plurality of pixel regions in a substrate and a photoelectric conversion element formed in each of the pixel regions. The device isolation structure may include an insulating gapfill layer extending from an upper portion to a lower portion of the device isolation structure, a spacer provided at the upper portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate, and a lower impurity region provided at the lower portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate.