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公开(公告)号：US20240047493A1
公开(公告)日：2024-02-08
申请号：US18216211
申请日：2023-06-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaekyu LEE , Jeongjin Lee , Dongseok Cho
IPC: H01L27/146
CPC classification number: H01L27/14621 , H01L27/1463 , H01L27/14636 , H01L27/14627 , H01L27/14685 , H01L27/14612
Abstract: An image sensor includes a first substrate including an analog block and a digital block, an isolation structure extending through the first substrate and dividing the analog block from the digital block, a first transistor on the digital block, a second transistor on the analog block, a wiring on and electrically connected to the second transistor, a second substrate on the wiring, a color filter array layer on the second substrate and including color filters, a microlens on the color filter array layer, a light sensing element in the second substrate, a transfer gate (TG) extending through a lower portion of the second substrate adjacent to the light sensing element, and a floating diffusion (FD) region at a lower portion of the second substrate adjacent to the TG and electrically connected to the wiring.
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公开(公告)号：US20230095808A1
公开(公告)日：2023-03-30
申请号：US18062231
申请日：2022-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
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公开(公告)号：US20220214624A1
公开(公告)日：2022-07-07
申请号：US17401611
申请日：2021-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Doogyu Lee , Seungyoon Lee
IPC: G03F7/20 , H01L21/027 , G03F9/00
Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.
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公开(公告)号：US20140254916A1
公开(公告)日：2014-09-11
申请号：US14182697
申请日：2014-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeongjin Lee , Chan Hwang , Seungyoon Lee
IPC: G06T7/00
CPC classification number: G06T7/001 , G03F7/70633 , G06T7/174 , G06T2207/10048 , G06T2207/10152 , G06T2207/30148 , G06T2207/30204 , H04N5/2256 , H04N5/332
Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.
Abstract translation: 一种用于测量覆盖层的方法包括接收使用具有第一波长的光捕获的第一覆盖标记的第一图像。 该方法包括接收使用具有不同于第一波长的第二波长的光捕获的第二重叠标记的第二图像。 该方法包括测量第一图像的中心部分和第二图像的中心部分之间的位移，其中第一和第二覆盖标记设置在不同的水平上。
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公开(公告)号：US20240134290A1
公开(公告)日：2024-04-25
申请号：US18332238
申请日：2023-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inbeom Yim , Junseong Yoon , Seungyoon Lee , Jeongjin Lee , Chan Hwang
CPC classification number: G03F7/70633 , G03F7/706831 , G03F7/706837 , H01L22/20
Abstract: Provided are a method of selecting multi-wavelengths for overlay measurement, for accurately measuring overlay, and an overlay measurement method and a semiconductor device manufacturing method using the multi-wavelengths. The method of selecting multi-wavelengths for overlay measurement includes measuring an overlay at multiple positions on a wafer at each of a plurality of wavelengths within a set first wavelength range, selecting representative wavelengths that simulate the overlay of the plurality of wavelengths, from among the plurality of wavelengths, and allocating weights to the representative wavelengths, respectively.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11927879B2
公开(公告)日：2024-03-12
申请号：US17407642
申请日：2021-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moosong Lee , Seung Yoon Lee , Jeongjin Lee
CPC classification number: G03F1/22 , G03F1/24 , G03F1/42 , G03F7/2004 , G03F7/2022 , G03F9/7003 , G03F9/7084
Abstract: A method includes forming a first photomask including N mask chip regions and a first mask scribe lane region surrounding each of the N mask chip regions, forming a second photomask including M mask chip regions and a second mask scribe lane region surrounding each of the M mask chip regions, performing a first semiconductor process including a first photolithography process using the first photomask on a semiconductor wafer; and performing a second semiconductor process including a second photolithography process using the second photomask on the semiconductor wafer. The first photolithography process is an extreme ultraviolet (EUV) photolithography process, the first photomask is an EUV photomask, N is a natural number of 2 or more, and M is two times N.
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公开(公告)号：US20230197756A1
公开(公告)日：2023-06-22
申请号：US18065531
申请日：2022-12-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Jeongsoon Kang , Jihong Kim , Changyong Um
IPC: H01L27/146
CPC classification number: H01L27/14634 , H01L27/1463 , H01L27/14621 , H01L27/14636 , H01L27/14645
Abstract: An image sensor includes a first lower chip, and an upper chip on and bonded to the first lower chip. The first lower chip and the upper chip collectively provide a plurality of pixels. A respective pixel of the plurality of pixels includes a photoelectric conversion element, a floating diffusion region, a ground region, and a transfer gate in the upper chip, and a plurality of lower transistors in the first lower chip. A first lower transistor among the plurality of lower transistors includes a plurality of first channel layers stacked vertically, and a first gate on the plurality of first channel layers.
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公开(公告)号：US11526087B2
公开(公告)日：2022-12-13
申请号：US17401611
申请日：2021-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Doogyu Lee , Seungyoon Lee
IPC: G03F7/20 , G03F9/00 , H01L21/027
Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.
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公开(公告)号：US11456222B2
公开(公告)日：2022-09-27
申请号：US16886237
申请日：2020-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woo-Yong Jung , Jinsun Kim , Seungyoon Lee , Jeongjin Lee , Chan Hwang
Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.
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公开(公告)号：US10949013B2
公开(公告)日：2021-03-16
申请号：US16319738
申请日：2017-07-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Youngho Cho , Iljoo Chae , Changhee Hong , Mooyoung Kim
IPC: G06F3/041
Abstract: A touch input sensing method of an electronic device can comprise the steps of: determining whether a first input device sensed a touch input before a second input device sensed the same; performing a command such that the second input device collects pressure information in a raw data mode, if the first input device sensed the touch input before the second input device sensed the same; allow the second input device to collect the pressure information according to the command; generating a pressure table by using the collected pressure information; and mapping the pressure table and coordinate information sensed by the first input device, so as to transmit the coordinate information and the pressure information to an AP.
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