公开(公告)号：US20240274173A1

公开(公告)日：2024-08-15

申请号：US18498267

申请日：2023-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheolhui LEE ,  Youngmin JO ,  Anil KAVALA ,  Jungjune PARK ,  Chiweon YOON

IPC: G11C7/22 ,  G11C7/10 ,  G11C7/14

CPC classification number: G11C7/222 ,  G11C7/1081 ,  G11C7/14 ,  G11C7/225

Abstract: Provided is a nonvolatile memory including a receive buffer configured to generate a buffer signal by comparing an input signal with a reference voltage, a reference voltage calibrator configured to generate a calibrated reference voltage code signal based on a reference voltage code signal and the buffer signal, and a reference voltage generator configured to generate a reference voltage corresponding to the calibrated reference voltage code signal. In addition, the read reference voltage calibrator includes a duty cycle monitor configured to generate a monitoring signal by measuring a duty cycle of the buffer signal, an up/down counter configured to generate a count number signal by comparing a reference duty cycle with a measurement duty cycle corresponding to the monitoring signal, and a code calculator configured to generate the calibrated reference voltage code signal based on the count number signal and the reference voltage code signal.